Solid-state imaging device and method of manufacturing said solid-state imaging device

ABSTRACT

It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plurality of IT-CCDs on a surface of a semiconductor substrate, bonding a translucent member to the surface of the semiconductor substrate in order to have a gap opposite to each light receiving region of the IT-CCD, and isolating a bonded member obtained at the bonding step for each of the IT-CCDs.

This application is a divisional of application Ser. No. 10/617,707, nowU.S. Pat. 7,074,638, filed on Jul. 14, 2003, which is acontinuation-in-part of application Ser. No. 10/419,861 filed on Apr.22, 2003, now abandoned for which priority is claimed under 35 U.S.C. §120. This application also claims priority under 35 U.S.C. § 119 toJapanese Applications 119262 filed on Apr. 22, 2002, 154528 filed on May28, 2002, 183072 filed on Jun. 24, 2002, 219645 filed on Jul. 29, 2002and 219791 filed on Jul. 29, 2002, the entire contents of which arehereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state imaging device and amethod of manufacturing the solid-state imaging device. Moreparticularly, the invention relates to a solid-state imaging device of achip size package (CSP) type in which a microlens is integrally providedon a chip.

2. Description of the Related Art

A reduction in the size of a solid-state image pickup device, such as aCCD (Charge Coupled Device), has been required because of the necessityof application to a mobile telephone or a digital camera.

As an example, there has been proposed a solid-state imaging device inwhich a microlens is provided in the light receiving area of asemiconductor chip. In particular, for example, there has been proposeda solid-state imaging device which is provided with a microlens in alight receiving region and is integrally mounted to have an airtightsealing portion between the light receiving region and the microlens,thereby reducing the size of the solid-state imaging device(JP-A-7-202152 gazette).

According to such a structure, a mounting area can be reduced, andfurthermore, an optical component such as a filter, a lens or a prismcan be stuck to the surface of the airtight sealing portion and amounting size can be reduced without a deterioration in the condensingcapability of the microlens.

In the mounting of the solid-state imaging device, however, it isnecessary to mount the solid-state imaging device on a support substratefor mounting in the fetch of a signal to the outside, thereby carryingout an electrical connection by a method such as bonding and performingsealing. Thus, there is a problem in that a great deal of time isrequired for the mounting because of a large man-hour.

In the mounting of the solid-state imaging device, however, it isnecessary to provide the solid-state imaging device on a supportsubstrate for mounting in the fetch of a signal to the outside, therebycarrying out an electrical connection by a method such as bonding andperforming sealing. In addition, it is necessary to mount an opticalcomponent such as a filter, a lens or a prism and a signal processingcircuit. Thus, there is a problem in that a great deal of time isrequired for the mounting because a large number of components areprovided. Moreover, there has been a serious problem in that variousperipheral circuits are necessary with a requirement for an enhancementin a resolution, resulting in an increase in the size of the wholedevice.

SUMMARY OF THE INVENTION

In consideration of the actual circumstances, it is an object of theinvention to provide a method of manufacturing a solid-state imagingdevice which can easily be manufactured and has a high reliability.

Moreover, it is another object to provide a solid-state imaging devicewhich can easily be connected to a body.

In consideration of the actual circumstances, it is an object of theinvention to provide a method of manufacturing a solid-state imagingdevice which can easily be manufactured and has a high reliability.

Moreover, it is another object to provide a solid-state imaging devicehaving a small size and a high driving speed.

Therefore, the invention provides a method of manufacturing asolid-state imaging device comprising the steps of forming a pluralityof IT-CCDs on a surface of a semiconductor substrate, bonding atranslucent member to the surface of the semiconductor substrate inorder to have a gap opposite to each light receiving region of theIT-CCD, forming an external connecting terminal corresponding to theIT-CCD, and isolating a bonded member obtained at the bonding step andprovided with the external connecting terminal for each of the IT-CCDs.

According to such a structure, positioning is carried out on a waferlevel, and collective mounting and integration are sequentiallyperformed for isolation every IT-CCD. Consequently, it is possible toform a solid-state imaging device which can easily be manufactured andhas a high reliability.

Moreover, it is desirable that the step of bonding a translucent membershould include the steps of preparing a translucent substrate having aconcave portion corresponding to a region in which the IT-CCD is to beformed, and bonding the translucent substrate to the surface of thesemiconductor substrate.

According to such a structure, the concave portion is only formed on thetranslucent substrate. Consequently, the concave portion can be formedto easily have a gap opposite to each light receiving region. Therefore,the number of components can be decreased and the manufacture can easilybe carried out.

It is desirable that the method should further comprise, prior to thebonding step, the step of selectively removing the surface of thesemiconductor substrate to surround the light receiving region, therebyforming a protruded portion, a gap being formed between the lightreceiving region and the translucent member by the protruded portion.

According to such a structure, the mounting is only carried out byinterposing the protruded portion (spacer) which is previously formed onthe surface of the semiconductor substrate. Consequently, it is possibleto easily provide a solid-state imaging device having an excellentworkability and a high reliability.

Moreover, the method is characterized in that, at the bonding step, agap is formed between the semiconductor substrate and the translucentmember through a spacer provided to surround the light receiving region.

According to such a structure, it is possible to easily provide asolid-state imaging device having a high reliability by only interposingthe spacer.

Furthermore, the method is characterized in that the isolating stepincludes the step of separating the translucent member to position aperipheral edge portion of the translucent member onto an inside of aperipheral edge portion of the IT-CCD in such a manner that a surface ofa peripheral edge portion of the IT-CCD is exposed from the translucentmember.

According to such a structure, it is possible to easily fetch anelectrode from the surface of the semiconductor substrate which isexposed.

Preferably, the method is characterized in that the bonding step isperformed at a temperature under 80 degree C.

According to such a structure, it is possible to reduce generation ofdistortion after bonding, if each of members has a different coefficientof linear thermal expansion.

Preferably, the method is characterized in that, in the bonding step, aroom temperature setting adhesive is utilized for bonding.

According to the method, it is possible to bond the translucent memberand the semiconductor substrate without rising temperature, and toprevent a generation of distortion.

Instead of the room temperature setting adhesive, the method is alsocharacterized in that, in the bonding step, a photo-curing adhesive isutilized for bonding the translucent member and the semiconductorsubstrate.

According to the method, it is also possible to bond the translucentmember and the semiconductor substrate without raising a temperature,and to preventing a generation of distortion.

Furthermore, in the bonding step, it may be used a semi-curing adhesivefor bonding the translucent member and the semiconductor substrate.Thereby, it is possible to realize a sophisticated positioning.

Preferably, the method is characterized in that, prior to the isolatingstep, the method includes a step of resin shielding for shielding thetranslucent member in a vicinity of bonding link with the semiconductorsubstrate by resin.

According to the method, it possible to prevent water from permeatingand form a reliable IT-CCD.

Also , it is preferable to perform the resin shielding step at atemperature under 80 degree C.

According to the method, it is possible to bond the translucent memberand the semiconductor substrate without raising temperature, and toreduce a generation of distortion.

Moreover, the invention provides a solid-state imaging device comprisinga semiconductor substrate provided with an IT-CCD, and a translucentmember connected to the semiconductor substrate in order to have a gapopposite to a light receiving region of the IT-CCD, wherein a connectingterminal is provided on a surface of the translucent member which isopposed to an attached surface of the semiconductor substrate, and theconnecting terminal is connected to the semiconductor substrate via athrough hole provided in the translucent member.

According to such a structure, signal fetch or conduction can be carriedout over the translucent member. Consequently, attachment can easily becarried out, an assembly into the device can readily be performed, andthe size of the whole device can be reduced. Moreover, the translucentmember is connected to the semiconductor substrate in order to have agap opposite to the light receiving region of the IT-CCD. Thus, it ispossible to provide a solid-state imaging device having a small size andan excellent condensing property.

It is desirable that the translucent member should be connected to thesemiconductor substrate with a spacer. Consequently, precision in thedimension of the gap can be enhanced and it is possible to obtain asolid-state imaging device which has an excellent optical characteristicat a low cost.

It is desirable that the spacer should be constituted by the samematerial as that of the translucent member. Consequently, a strain canbe prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thetranslucent member and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by the samematerial as that of the semiconductor substrate. Consequently, a straincan be prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thesemiconductor substrate and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by a resinmaterial. The resin material may be filled between the IT-CCD substrateand the translucent substrate or may be constituted by a sheet-shapedresin material. If the spacer is formed by filling the resin materialbetween the translucent member and the semiconductor substrate, a stressis absorbed by an elasticity, and a strain can be prevented from beingcaused by a difference in a coefficient of thermal expansion for achange in a temperature and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by a 42-alloy orsilicon. Consequently, a cost can be reduced, and furthermore, a straincan be prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thesemiconductor substrate and a lifetime can be prolonged. The 42-alloy isnot restricted but another metal, ceramics or an inorganic material maybe used.

The invention provides a method of manufacturing an IT-CCD, comprisingthe steps of forming a plurality of IT-CCDs on a surface of asemiconductor substrate, bonding a translucent member having a throughhole filled with a conductive material on the surface of thesemiconductor substrate in order to have a gap opposite to each lightreceiving region of the IT-CCD, and isolating a bonded member obtainedat the bonding step every IT-CCD.

According to such a structure, positioning is carried out on a waferlevel, and collective mounting and integration are sequentiallyperformed for isolation every IT-CCD by using the translucent memberhaving the through hole. Consequently, it is possible to form asolid-state imaging device which can easily be manufactured and has ahigh reliability.

It is desirable that the step of bonding a translucent member shouldinclude the steps of preparing a translucent substrate having aplurality of concave portions in positions corresponding to regions inwhich the IT-CCDs are to be formed and a through hole in the vicinity ofthe concave portions, and bonding the translucent substrate to thesurface of the semiconductor substrate. Consequently, a manufacturingman-hour can be more reduced and the mounting can easily be carried out.

According to such a structure, the concave portion and the through holeare only formed in the translucent substrate. Consequently, the concaveportion can easily be formed to have a gap opposite to each lightreceiving region and electrode fetch can also be performed readily.Therefore, the number of components can be decreased and the manufacturecan easily be carried out.

It is desirable that the method should further comprise the step offorming a protruded portion on the surface of the semiconductorsubstrate to surround the light receiving region prior to the bondingstep, a gap being formed between the light receiving region and thetranslucent member by the protruded portion. Consequently, it ispossible to easily provide a solid-state imaging device having a highreliability by only the processing of the semiconductor substrate. Ifthe etching step of forming the protruded portion is carried out beforethe formation of the IT-CCD, the IT-CCD is less damaged andphotolithography to be carried out over the surface of the substratehaving a concavo-convex portion causes a pattern shift in some cases. Onthe other hand, if the etching step of forming the protruded portion iscarried out after the formation of the IT-CCD, the IT-CCD is slightlydamaged and an element region can be formed with high precision withouthindering a manufacturing process for the IT-CCD.

It is desirable that at the bonding step, a gap should be formed betweenthe semiconductor substrate and the translucent member through a spaceprovided to surround the light receiving region.

According to such a structure, it is possible to easily provide asolid-state imaging device having a high reliability by only interposingthe spacer.

Moreover, the invention provides a solid-state imaging device comprisinga semiconductor substrate provided with an IT-CCD, and a translucentmember connected to the semiconductor substrate in order to have a gapopposite to a light receiving region of the IT-CCD, wherein thetranslucent member constitutes an optical member having a condensingfunction.

According to such a structure, the optical member having a condensingfunction and/or an image forming function, for example, a lens isintegrated. Consequently, the optical member does not need to bemounted, and a size can be reduced and a reliability can be enhanced.Moreover, attachment can easily be carried out and an assembly into thedevice can readily be performed. Thus, the size of the whole device canbe reduced. Moreover, the translucent member is connected to thesemiconductor substrate in order to have a gap opposite to the lightreceiving region of the IT-CCD. Thus, it is possible to provide asolid-state imaging device having a small size and an excellentcondensing property.

It is desirable that the translucent member should be connected to thesemiconductor substrate with a spacer. Consequently, precision in thedimension of the gap can be enhanced and it is possible to obtain asolid-state imaging device which has an excellent optical characteristicat a low cost.

It is desirable that the spacer should be constituted by the samematerial as that of the translucent member. Consequently, a strain canbe prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thetranslucent member and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by the samematerial as that of the semiconductor substrate. Consequently, a straincan be prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thesemiconductor substrate and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by a resinmaterial. The resin material may be filled between the IT-CCD substrateand the translucent substrate or may be constituted by a sheet-shapedresin material. If the spacer is formed by filling the resin materialbetween the translucent member and the semiconductor substrate, a stressis absorbed by an elasticity, and a strain can be prevented from beingcaused by a difference in a coefficient of thermal expansion for achange in a temperature and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by a 42-alloy orsilicon. Consequently, a cost can be reduced, and furthermore, a straincan be prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thesemiconductor substrate and a lifetime can be prolonged. The 42-alloy isnot restricted but another metal, ceramics or an inorganic material maybe used.

The invention provides a method of manufacturing a solid-state imagingdevice, comprising the steps of forming a plurality of IT-CCDs on asurface of a semiconductor substrate, bonding an optical member having acondensing function on the surface of the semiconductor substrate inorder to have a gap opposite to each light receiving region of theIT-CCD, and isolating a bonded member obtained at the bonding step everyIT-CCD.

According to such a structure, the IT-CCD substrate and the opticalmember having the condensing function are positioned on a wafer level,and collective mounting and integration are sequentially performed forisolation every IT-CCD. Consequently, it is possible to form asolid-state imaging device which can easily be manufactured and has ahigh reliability.

Moreover, it is desirable that at the step of bonding an optical member,a translucent substrate comprising a lens corresponding to the region inwhich the IT-CCD is to be formed and having a concave portion should beprepared and the translucent substrate should be bonded to the surfaceof the semiconductor substrate.

According to such a structure, the optical member such as a lens and theconcave portion are only formed in the translucent substrate.Consequently, the concave portion can easily be formed to have a gapopposite to each light receiving region. Therefore, the number ofcomponents can be decreased and the manufacture can easily be carriedout.

It is desirable that the method should further comprise the step offorming a protruded portion by selectively removing the surface of thesemiconductor substrate to surround the light receiving region prior tothe bonding step, a gap being formed between the light receiving regionand the optical member by the protruded portion.

According to such a structure, the mounting is simply carried out byinterposing the protruded portion (spacer) formed on the surface of thesemiconductor substrate in advance. Consequently, it is possible toeasily provide a solid-state imaging device having a high reliabilitywith a high workability.

Moreover, the bonding step is characterized in that a gap is formedbetween the semiconductor substrate and the optical member through aspacer provided to surround the light receiving region.

According to such a structure, it is possible to easily provide asolid-state imaging device having a high reliability by only interposingthe spacer.

Moreover, the isolating step is characterized by the step of cutting theoptical member to position a peripheral edge portion of the opticalmember on an inside of a peripheral edge portion of the IT-CCD in such amanner that a surface of the peripheral edge portion of the IT-CCD isexposed from the optical member.

According to such a structure, it is possible to easily fetch anelectrode over the surface of the semiconductor substrate thus exposed.

Next, the invention provides a solid-state imaging device comprising afirst semiconductor substrate provided with an IT-CCD, and a translucentmember having a condensing function which is connected to the firstsemiconductor substrate in order to have a gap opposite to a lightreceiving region of the IT-CCD, wherein a second semiconductor substrateconstituting a peripheral circuit is provided on the first semiconductorsubstrate.

According to such a structure, the optical member having the condensingfunction, for example, a lens is integrated. Consequently, the opticalmember does not need to be mounted, and a size can be reduced and areliability can be enhanced. Moreover, since a peripheral circuit boardis also provided, attachment can easily be carried out and an assemblyinto the device can readily be performed. Thus, the size of the wholedevice can be reduced. Moreover, the translucent member is connected tothe first semiconductor substrate in order to have a gap opposite to thelight receiving region of the IT-CCD. Thus, it is possible to provide asolid-state imaging device having a small size and an excellentcondensing property.

It is desirable that the translucent member should be connected to thefirst semiconductor substrate with a spacer. Consequently, precision inthe dimension of the gap can be enhanced and it is possible to obtain asolid-state imaging device which has an excellent opticalcharacteristic.

It is desirable that the spacer should be constituted by the samematerial as that of the translucent member. Consequently, a strain canbe prevented from being caused by a difference in a coefficient ofthermal expansion for a change in a temperature together with thetranslucent member and a lifetime can be prolonged.

It is desirable that the spacer should be constituted by the samematerial as that of the first semiconductor substrate. Consequently, astrain can be prevented from being caused by a difference in acoefficient of thermal expansion for a change in a temperature togetherwith the first semiconductor substrate and a lifetime can be prolonged.

It is desirable that the spacer should be formed by filling a resinmaterial between the translucent member and the first semiconductorsubstrate. Consequently, a stress is absorbed by an elasticity, and astrain can be prevented from being caused by a difference in acoefficient of thermal expansion for a change in a temperature and alifetime can be prolonged.

The invention provides a method of manufacturing a solid-state imagingdevice, comprising the steps of forming a plurality of IT-CCDs on asurface of a first semiconductor substrate, forming a peripheral circuiton a surface of a second semiconductor substrate, bonding an opticalmember having a condensing function on the first semiconductor substrateand the second semiconductor substrate in order to have a gap oppositeto each light receiving region of the IT-CCD, and isolating a bondedmember obtained at the bonding step every IT-CCD.

According to such a structure, the IT-CCD substrate and the opticalmember having the condensing function are positioned on a wafer level,and collective mounting and integration are sequentially performed forisolation every IT-CCD. Consequently, it is possible to form asolid-state imaging device which can easily be manufactured and has ahigh reliability.

Moreover, it is desirable that at the step of bonding an optical member,a translucent substrate comprising a lens corresponding to the region inwhich the IT-CCD is to be formed and having a concave portion should beprepared and the translucent substrate should be bonded to the surfaceof the first semiconductor substrate.

According to such a structure, the optical member such as a lens and theconcave portion are only formed in the translucent substrate.Consequently, the concave portion can easily be formed to have a gapopposite to each light receiving region. Therefore, the number ofcomponents can be decreased and the manufacture can easily be carriedout.

It is desirable that the method should further comprise the step offorming a protruded portion by selectively removing the surface of thefirst semiconductor substrate to surround the light receiving regionprior to the bonding step, a gap being formed between the lightreceiving region and the optical member by the protruded portion.

According to such a structure, the mounting is simply carried out byinterposing the protruded portion (spacer) formed on the surface of thefirst semiconductor substrate in advance. Consequently, it is possibleto easily provide a solid-state imaging device having a high reliabilitywith a high workability.

Moreover, the bonding step is characterized in that a gap is formedbetween the first semiconductor substrate and the optical member througha space provided to surround the light receiving region.

According to such a structure, it is possible to easily provide asolid-state imaging device having a high reliability by only interposingthe spacer.

Moreover, the isolating step is characterized by the step of cutting theoptical member to position a peripheral edge portion of the opticalmember. on an inside of a peripheral edge portion of each of IT-CCDs ofthe first semiconductor substrate in such a manner that a surface of theperipheral edge portion of the each IT-CCD is exposed from the opticalmember.

According to such a structure, it is possible to easily fetch anelectrode on the surface of the first semiconductor substrate thusexposed.

Therefore, the invention provides a solid-state imaging devicecomprising a first semiconductor substrate provided with an IT-CCD, anda translucent member connected to the first semiconductor substrate inorder to have a gap opposite to a light receiving region of the IT-CCD,wherein a second semiconductor substrate having a peripheral circuitformed thereon is provided on a surface opposed to a surface of thefirst semiconductor substrate on which the IT-CCD is to be formed, andthe peripheral circuit is connected to the IT-CCD via a through holeprovided on the first semiconductor substrate.

According to such a structure, the peripheral circuit is provided andthe first and second semiconductor substrates are electrically connectedto each other via the through hole formed on the first semiconductorsubstrate. Consequently, the size of the whole device can be reduced,and furthermore, a distance between the first semiconductor substrateand the second semiconductor substrate can be reduced. Accordingly, awiring resistance can be reduced and a driving speed can be increased.

Moreover, the first and second semiconductor substrates are bonded toeach other directly through a method such as cold direct bonding.Consequently, it is possible to obtain firmer bonding. Furthermore, theelectrical connection can be achieved well.

In addition, the first and second semiconductor substrates are bonded toeach other with an adhesive layer in between. Consequently, desirablebonding can easily be carried out. It is desirable that the adhesivelayer should have a coefficient of thermal expansion which is as closeas possible to that of each of the first and second semiconductorsubstrates.

Furthermore, the first and second semiconductor substrates may be bondedto each other with a heat insulating material in between. Consequently,the heat of the second semiconductor substrate constituting theperipheral circuit is transferred to the IT-CCD substrate. Thus, it ispossible to prevent the characteristic of the IT-CCD from beinginfluenced adversely.

Moreover, the first and second semiconductor substrates are bonded toeach other with a magnetic shield material in between. Consequently, itis possible to block mutual noises made by unnecessary radiation.

Furthermore, the invention provides a method of manufacturing asolid-state imaging device, comprising the steps of forming a pluralityof IT-CCDs on a surface of a first semiconductor substrate, forming aperipheral circuit on a surface of a second semiconductor substrate,bonding a translucent member on the surface of the first semiconductorsubstrate in order to have a gap opposite to each light receiving regionof the IT-CCD, bonding the second semiconductor substrate to a back sideof the first semiconductor substrate, forming a through hole on thefirst semiconductor substrate before or after the bonding step and thesemiconductor substrate bonding step and electrically connecting theIT-CCD to a back face of the first semiconductor substrate, andisolating a bonded member obtained at the bonding step every IT-CCD.

According to such a structure, the first semiconductor substratemounting the IT-CCD thereon and the second semiconductor substratemounting the peripheral circuit thereon are positioned on a wafer levelwith respect to the translucent member, and are collectively mounted andintegrated, and are thus isolated for each solid-state imaging device.Consequently, it is possible to form a solid-state imaging device whichcan easily be manufactured and has a high reliability.

It is desirable that at the semiconductor substrate bonding step, thefirst and second semiconductor substrates should be bonded to each otherby direct bonding. Thus, it is possible to easily carry out theformation without making the substrate dirty due to the protrusion of anadhesive.

At the semiconductor substrate bonding step, moreover, the first andsecond semiconductor substrates may be bonded to each other with anadhesive layer in between, and they can easily be bonded to each otherwithout a shift by a photo-curing adhesive layer, a thermosettingadhesive layer or their combination.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a sectional view showing a solid-state imagingdevice formed by a method according to a first embodiment of theinvention and an enlarged sectional view showing a main part,

FIGS. 2A to 2D are views showing a process for manufacturing thesolid-state imaging device according to the first embodiment of theinvention,

FIGS. 3A to 3C are views showing the process for manufacturing thesolid-state imaging device according to the first embodiment of theinvention,

FIGS. 4A to 4D are views showing a process for manufacturing asolid-state imaging device according to a second embodiment of theinvention,

FIGS. 5A to 5E are views showing a process for manufacturing asolid-state imaging device according to a third embodiment of theinvention,

FIGS. 6A to 6D are views showing a process for manufacturing asolid-state imaging device according to a fourth embodiment of theinvention,

FIGS. 7A to 7D are views showing a process for manufacturing asolid-state imaging device according to a fifth embodiment of theinvention,

FIGS. 8A to 8E are views showing a process for manufacturing asolid-state imaging device according to a sixth embodiment of theinvention,

FIGS. 9A to 9E are views showing a process for manufacturing asolid-state imaging device according to a seventh embodiment of theinvention,

FIGS. 10A to 10D are views showing a process for manufacturing asolid-state imaging device according to an eighth embodiment of theinvention,

FIGS. 11A to 11D are views showing a process for manufacturing asolid-state imaging device according to a ninth embodiment of theinvention,

FIGS. 12A and 12B are views showing a process for manufacturing asolid-state imaging device according to a tenth embodiment of theinvention,

FIG. 13 is a view showing the process for manufacturing a solid-stateimaging device according to the tenth embodiment of the invention,

FIGS. 14A and 14B are views showing a process for manufacturing asolid-state imaging device according to an eleventh embodiment of theinvention,

FIGS. 15A to 15C are views showing a process for manufacturing asolid-state imaging device according to a twelfth embodiment of theinvention,

FIGS. 16A to 16D are views showing a process for manufacturing asolid-state imaging device according to a thirteenth embodiment of theinvention,

FIGS. 17A to 17C are views showing a process for manufacturing asolid-state imaging device according to a fourteenth embodiment of theinvention,

FIG. 18 is a view showing a process for manufacturing a solid-stateimaging device according to a fifteenth embodiment of the invention,

FIGS. 19A to 19D are views showing a process for manufacturing asolid-state imaging device according to a sixteenth embodiment of theinvention,

FIGS. 20A to 20C are views showing a process for manufacturing asolid-state imaging device according to a seventeenth embodiment of theinvention,

FIGS. 21A to 21F are views showing a process for manufacturing asolid-state imaging device according to an eighteenth embodiment of theinvention,

FIGS. 22A to 22C are views showing a process for manufacturing asolid-state imaging device according to a nineteenth embodiment of theinvention,

FIGS. 23A to 23D are views showing a process for manufacturing asolid-state imaging device according to a twentieth embodiment of theinvention,

FIG. 24 is a view showing a process for manufacturing a solid-stateimaging device according to a twenty-first embodiment of the invention,

FIGS. 25A to 25E are views showing the process for manufacturing asolid-state imaging device according to the twenty-first embodiment ofthe invention,

FIG. 26 is a view showing a process for manufacturing a solid-stateimaging device according to a twenty-second embodiment of the invention,

FIGS. 27A to 27C are views showing a process for manufacturing asolid-state imaging device according to a twenty-third embodiment of theinvention,

FIGS. 28A to 28D are views showing the process for manufacturing asolid-state imaging device according to the twenty-third embodiment ofthe invention,

FIGS. 29A to 229E are views showing a process for manufacturing asolid-state imaging device according to a twenty-fourth embodiment ofthe invention,

FIGS. 30A and 30B are views showing a process for manufacturing asolid-state imaging device according to a twenty-fifth embodiment of theinvention,

FIG. 31 is a view showing a process for manufacturing a solid-stateimaging device according to a twenty-sixth embodiment of the invention,

FIG. 32 is a view showing a process for manufacturing a solid-stateimaging device according to a twenty-seventh embodiment of theinvention,

FIG. 33 is a view showing a solid-state imaging device according to atwenty-eighth embodiment of the invention,

FIGS. 34A, 34A′, and 34B to 34E are views showing a process formanufacturing the solid-state imaging device according to thetwenty-eighth embodiment of the invention,

FIGS. 35A to 35E are views showing the process for manufacturing thesolid-state imaging device according to the twenty-eighth embodiment ofthe invention,

FIGS. 36A to 36C are views showing a process for manufacturing asolid-state imaging device according to a twenty-ninth embodiment of theinvention,

FIGS. 37A to 37C are views showing a process for manufacturing asolid-state imaging device according to a thirtieth embodiment of theinvention,

FIGS. 38A, 38A′, and 38B to 38E are views showing a process formanufacturing a solid-state imaging device according to a thirty-firstembodiment of the invention,

FIGS. 39A, 39A′, 39B, 39B′, and 39C to 39F are views showing a processfor manufacturing a solid-state imaging device according to athirty-second embodiment of the invention,

FIGS. 40A to 40D are views showing a process for manufacturing asolid-state imaging device according to a thirty-third embodiment of theinvention,

FIG. 41 is a view showing a process for manufacturing a solid-stateimaging device according to a thirty-fourth embodiment of the invention,

FIGS. 42A, 42A′, and 42B to 42D are views showing the process formanufacturing a solid-state imaging device according to thethirty-fourth embodiment of the invention,

FIGS. 43A to 43C are views showing the process for manufacturing asolid-state imaging device according to the thirty-fourth embodiment ofthe invention,

FIGS. 44A and 44B are views showing a process for manufacturing asolid-state imaging device according to a thirty-fifth embodiment of theinvention,

FIGS. 45A and 45B are views showing a process for manufacturing asolid-state imaging device according to a thirty-sixth embodiment of theinvention,

FIGS. 46A, 46A′, and 46B to 46D are views showing a process formanufacturing a solid-state imaging device according to a thirty-seventhembodiment of the invention,

FIGS. 47A to 47D are views showing a process for manufacturing asolid-state imaging device according to a thirty-eighth embodiment ofthe invention,

FIGS. 48A to 48D are views showing a process for manufacturing asolid-state imaging device according to a thirty-ninth embodiment of theinvention,

FIG. 49 is a view showing a process for manufacturing a solid-stateimaging device according to a fortieth embodiment of the invention,

FIG. 50 is a view showing a process for manufacturing a solid-stateimaging device according to a forty-first embodiment of the invention,

FIGS. 51A to 51F are views showing the shape of a liquid reservoiraccording to the embodiments of the invention,

FIG. 52 is a view showing a structure of a resin shielding according toa forty-first embodiment of the invention,

FIGS. 53A and 53B are a sectional view showing a solid-state imagingdevice according to a forty-second embodiment of the invention and anenlarged sectional view showing a main part,

FIGS. 54A, 54A′, and 54B to 54E are views showing a process formanufacturing the solid-state imaging device according to theforty-second embodiment of the invention,

FIGS. 55A to 55E are views showing the process for manufacturing thesolid-state imaging device according to the forty-second embodiment ofthe invention,

FIGS. 56A to 56C are views showing a process for manufacturing asolid-state imaging device according to a second embodiment of theinvention,

FIGS. 57A to 57C are views showing a process for manufacturing asolid-state imaging device according to a forty-fourth embodiment of theinvention,

FIGS. 58A, 58A′, and 58B to 58E are views showing a process formanufacturing a solid-state imaging device according to a forty-fifthembodiment of the invention,

FIGS. 59A and 59A′, 59B and 59B′, and 59C to 59F are views showing aprocess for manufacturing a solid-state imaging device according to aforty-sixth embodiment of the invention,

FIGS. 60A to 60D are views showing a process for manufacturing asolid-state imaging device according to a forty-seventh embodiment ofthe invention, and

FIGS. 61A and 61B are a sectional view showing a solid-state imagingdevice according to a forty-eighth embodiment of the invention and anenlarged sectional view showing a main part,

FIGS. 62A, 62A′, and 62B to 62D are views showing a process formanufacturing the solid-state imaging device according to theforty-eighth embodiment of the invention,

FIGS. 63A to 63C are views showing the process for manufacturing thesolid-state imaging device according to the forty-eighth embodiment ofthe invention,

FIGS. 64A and 64B are views showing a process for manufacturing asolid-state imaging device according to a forty-ninth embodiment of theinvention,

FIGS. 65A and 65B is a view showing a process for manufacturing asolid-state imaging device according to a fiftieth embodiment of theinvention,

FIGS. 66A, 66A′, and 66B to 66D are views showing a process formanufacturing a solid-state imaging device according to a fifty-firstembodiment of the invention,

FIGS. 67A to 67D is a view showing a process for manufacturing asolid-state imaging device according to a fifty-second embodiment of theinvention,

FIGS. 68A to 68D are views showing a process for manufacturing asolid-state imaging device according to a fifty-third embodiment of theinvention,

FIG. 69 is a view showing a process for manufacturing a solid-stateimaging device according to a fifty-fourth embodiment of the invention,

FIG. 70 is a view showing a process for manufacturing a solid-stateimaging device according to an fifty-fifth embodiment of the invention,

FIGS. 71A and 71B are sectional views showing a solid-state imagingdevice according to a fifty-sixth embodiment of the invention and anenlarged sectional view showing a main part,

FIGS. 72A, 72A′, and 72B to 72D are views showing a process formanufacturing the solid-state imaging device according to thefifty-sixth embodiment of the invention,

FIGS. 73A to 73C are views showing the process for manufacturing thesolid-state imaging device according to the fifty-sixth embodiment ofthe invention,

FIGS. 74A and 74B are views showing a process for manufacturing asolid-state imaging device according to a fifty-seventh embodiment ofthe invention,

FIGS. 75A and 75B are views showing a process for manufacturing asolid-state imaging device according to a fifty-eighth embodiment of theinvention,

FIGS. 76A, 76A′, and 76B to 76D are views showing a process formanufacturing a solid-state imaging device according to a fifty-ninthembodiment of the invention,

FIGS. 77A to 77C are views showing a process for manufacturing asolid-state imaging device according to a sixtieth embodiment of theinvention,

FIGS. 78A to 78D are views showing a process for manufacturing asolid-state imaging device according to a sixth embodiment of theinvention,

FIG. 79 is a view showing a process for manufacturing a solid-stateimaging device according to a sixty-second embodiment of the invention,

FIG. 80 is a view showing a process for manufacturing a solid-stateimaging device according to an sixty-third embodiment of the invention,

FIGS. 81A and 81B are sectional views showing a solid-state imagingdevice according to a sixty-fourth embodiment of the invention and anenlarged sectional view showing a main part,

FIGS. 82A to 82D are views showing a process for manufacturing thesolid-state imaging device according to the sixty-fourth embodiment ofthe invention,

FIGS. 83A to 83C are views showing the process for manufacturing thesolid-state imaging device according to the sixty-fourth embodiment ofthe invention,

FIGS. 84A to 84D are views showing the process for manufacturing thesolid-state imaging device according to the sixty-fourth embodiment ofthe invention,

FIGS. 85A to 85E are views showing a process for manufacturing asolid-state imaging device according to a sixty-fifth embodiment of theinvention,

FIGS. 86A and 86B are views showing a process for manufacturing asolid-state imaging device according to a sixty-sixth embodiment of theinvention,

FIG. 87 is a view showing a process for manufacturing a solid-stateimaging device according to a sixty-seventh embodiment of the invention,and

FIG. 88 is a view showing a process for manufacturing a solid-stateimaging device according to a sixty-eighth embodiment of the invention.

In the figures, the reference numeral 100 to an IT-CCD substrate; 101 toa silicon substrate 102 to an IT-CCD; 200 to a sealing cover glass; 201to a glass substrate; 203S to an spacer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the invention will be described below with reference tothe drawings.

First Embodiment

As shown in a sectional view of FIG. 1A and an enlarged sectional viewshowing a main part in FIG. 1B, a solid-state imaging device has such astructure that a glass substrate 201 to be a translucent member isbonded to the surface of an IT-CCD substrate 100 comprising a siliconsubstrate 101 to be a semiconductor substrate provided with an IT-CCD102 through a spacer 203S in order to have a gap C corresponding to thelight receiving region of the silicon substrate 101, and furthermore,the peripheral edge of the silicon substrate 101 is individuallyisolated by dicing, and an electrical connection to an external circuit(not shown) can be achieved through a bonding pad BP formed on thesurface of the silicon substrate 101 in the peripheral edge portionexposed from the glass substrate 201. The spacer 203S has a height of 10to 500 μm, and preferably 80 to 120 μm. Further, a spacer width is setto be approximately 100 to 500 μm.

As shown in the enlarged sectional view showing a main part in FIG. 1B,the IT-CCD substrate has the IT-CCD arranged on the surface thereof, andfurthermore, is constituted by the silicon substrate 101 provided withan RGB color filter 46 and a microlens 50.

In the IT-CCD, a channel stopper 28 is provided in a p well 101 b formedon the surface of an n-type silicon substrate 101 a, and a photodiode 14and an electric charge transfer element 33 are formed with the channelstopper 28 interposed therebetween. Herein, a p+ channel (p-typeimpurity) region 14 b is provided in a n-type impurity region 14 a toform the photodiode 14. Moreover, a vertical charge transfer channel 20comprising an n-type impurity region having a depth of approximately 0.3μm is formed in the p well region 101 b, and a vertical charge transferelectrode 32 comprising a polycrystalline silicon layer is formed on thevertical charge transfer channel 20 through a gate insulating film 30comprising a silicon oxide film so that an electric charge transferelement 33 is constituted. Moreover, a channel 26 for a reading gate isformed by the p-type impurity region between the electric chargetransfer element 33 and the photodiode 14 on the side where a signalcharge is read onto the vertical charge transfer channel 20.

The n-type impurity region 14 b is exposed from the surface of thesilicon substrate 101 along the channel 26 for a reading gate and asignal charge generated in the photodiode 14 is temporarily stored inthe n-type impurity region 14 b and is then read through the channel 26for a reading gate.

On the other hand, the channel stopper 28 comprising a p+ type impurityregion is present between the vertical charge transfer channel 20 andanother photodiode 14. Consequently, the photodiode 14 and the verticalcharge transfer channel 20 are electrically isolated from each other andthe vertical charge transfer channels 20 are isolated so as not to comein contact with each other.

Furthermore, the vertical charge transfer electrode 32 covers thechannel 26 for a reading gate, and the n-type impurity region 14 b isexposed and a part of the channel stopper 28 is exposed. A signal chargeis transferred from the channel 26 for a reading gate which is providedbelow any vertical charge transfer electrode 32 to which a readingsignal is applied.

The vertical charge transfer electrode 32 constitutes, together with thevertical charge transfer channel 20, a vertical charge transfer device(VCCD) 33 for transferring a signal charge generated by the pn junctionof the photodiode 14 in a vertical direction. The surface of thesubstrate provided with the vertical charge transfer electrode 32 iscovered with a surface protective film 36 and a shielding film 38 formedof tungsten is provided thereon, and only a light receiving region 40 ofthe photodiode is opened and other regions are shielded.

In addition, the upper layer of the vertical charge transfer electrode32 is covered with a flattened insulating film 43 for surface flatteningand a translucent resin film 44 formed on an upper layer thereof, andfurthermore, a filter layer 46 is formed thereon. The filter layer 46has a red filter layer 46R, a green filter layer 46G and a blue filterlayer 46B arranged sequentially in order to make a predetermined patterncorresponding to each photodide 14.

Moreover, the upper layer is covered with a microlens array comprising amicrolens 50 formed by patterning a translucent resin containing aphotosensitive resin having a refractive index of 1.3 to 2.0 by anetching method using photolithography through a flattened insulatingfilm 48 and then fusing the same translucent resin, and rounding thefused translucent resin by a surface tension and thereafter cooling therounded translucent resin.

Next, description will be given to a process for manufacturing thesolid-state imaging device. This method is based on a so-called waferlevel CSP method in which positioning is carried out on a wafer level,collective mounting and integration are performed and isolation for eachIT-CCD is then executed as shown in views illustrating the manufacturingprocess in FIGS. 2A to 2C and FIGS. 3A to 3C. This method ischaracterized in that a sealing cover glass 200 having a spacer which isprovided with a spacer 203S in advance is used.

First of all, description will be given to the formation of a glasssubstrate having a spacer.

As shown in FIG. 2A, a silicon substrate 203 to be a spacer is stuck tothe surface of a glass substrate 201 through an adhesive layer 202comprising an ultraviolet curing type adhesive (a Cation PolymerizingEnergy Line Curing Adhesive). Herein, a so-called low α ray glass (CG1:registered trademark) having fewer α rays causing an image noise is usedas the glass substrate 201. It is desirable that a material having fewerportions to be an α ray radiation nucleus should be used for the glasssubstrate 201 to be utilized. It is desirable that an α ray limit valueshould be 0.002 (DPH/cm²).

As shown in FIG. 2B, then, the silicon substrate 203 is etched by anetching method using the photolithography with a resist patternremaining in a portion to be the spacer, and the spacer 203S is thusformed.

As shown in FIG. 2C, thereafter, a resist is filled in a spacer regionexcluding an element region in a state in which the resist pattern forforming the spacer 203S is left, and the glass substrate is etched tohave a predetermined depth. Consequently, an element trench section 204is formed as shown in FIG. 2D.

It is desirable that the spacer width should be set to be approximately100 to 500 μm. If the spacer width is smaller than 100 μm, there is apossibility that sealing might be insufficient, and furthermore, adefective strength might be generated. If the spacer width is more than500 μm, furthermore, there is a problem in that a division (the numberof units which can be taken out of one wafer) is decreased and a sizecannot be reduced. Moreover, it is desirable that a distance between thelight receiving surface and the spacer should be set to be 50 μm or morein consideration of the exudation of an adhesive.

The spacer is formed by the silicon substrate. If the etching is carriedout on such an etching condition that the etching speed of silicon oxideto be the main component of the glass substrate is much higher than theetching speed of silicon, therefore, it is also possible to perform theetching in a state in which the side walls of the spacer is maintainedto be exposed in the element region. In the formation of the elementtrench section 204, it is also possible to use a dicing blade(grindstone).

The etching condition may be selected in such a manner that a stuckforeign substance has a size of 5 μm or less in the etching of thespacer. When the stuck foreign substance has a size of 5 μm or less, itis possible to prevent an image noise from being generated if a distancebetween the light receiving surface and the lower surface of the glasssubstrate is set to be 0.08 mm or more as will be described below.

Subsequently, an adhesive layer 207 is further formed on the surface ofthe spacer.

In some cases in which a bubble is mixed into the adhesive layer, itcauses an image noise. It is desirable that the adhesive layer 207should have a thickness of 5 μm or less. If the thickness is equal to orless than 5 μm, a bubble having a thickness of 5 μm or more is notpresent. If the distance between the light receiving surface and thelower surface of the glass substrate which will be described below isset to be 0.08 mm or more as described above, it is possible to preventthe image noise from being generated.

Moreover, the photolithography may be carried out again to form such aresist pattern as to include the whole side wall of the spacer, and theetching may be carried out through the resist pattern, thereby formingthe trench section 204. Thus, the sealing cover glass 200 provided withthe trench section 204 and the spacer 203S is obtained.

It is desirable that the spacer should have a height of 0.088 mm or morein order to prevent the generation of the image noise and should be 0.12mm or less in order to increase a productivity of the formation of thespacer. In the case in which the spacer 203S is to be formed by theetching, it is also possible to carry out the etching while protectingthe side walls of the spacer by using a C₄F₈ plasma. Moreover, it ispreferable that a bottom surface should be etched by anisotropic etchingusing an SF₆+O₂ plasma.

Next, an IT-CCD substrate is formed. In the formation of the elementsubstrate, as shown in FIG. 3A, the silicon substrate 101 (a 6-inchwafer is used) is prepared in advance and a cut trench 104 is formed bya method such as etching in a region corresponding to an isolating linefor isolation into each IT-CCD over the surface of the silicon substrate101. By using an ordinary silicon process, then, a channel stopper layeris formed, a channel region is formed and an element region such as anelectric charge transfer electrode . . . is formed. Moreover, there isformed a bonding pad BP which is provided with a wiring layer on asurface and comprises a gold layer for an external connection.

As shown in FIG. 3B, then, an alignment is carried out with an alignmentmark formed in the peripheral edge portion of each substrate, and thesealing cover glass 200 is mounted on the IT-CCD substrate 100 providedwith the element region as described above and is thus heated so thatboth of them are integrated with the adhesive layer 207. It is desirablethat this process should be executed in a vacuum or an inert gasatmosphere such as a nitrogen gas. In the integration, it is alsopossible to use a thermosetting and ultraviolet curing adhesive as wellas a thermosetting adhesive. In the case in which the surface of theIT-CCD substrate is formed of Si or metal, moreover, it is also possibleto carry out bonding through surface activating cold bonding withoutusing an adhesive.

Thereafter, CMP (chemical mechanical polishing) is carried out from theback side of the glass substrate 201 and the back side of the glasssubstrate 201 is removed to reach the trench section 204.

By this step, it is possible to carry out individual isolationsimultaneously with a reduction in the thickness of the glass substrate.

As shown in FIG. 3C, furthermore, the CMP is carried out from the backside of the silicon substrate 101 in the same manner to executepolishing up to the cut trench 104 portion. Consequently, individualsolid-state imaging devices can be obtained by the isolation.

Thus, the collective mounting is carried out and the individualisolation is then performed without the execution of an individualalignment and an electrical connection such as wire bonding. Therefore,manufacture can easily be carried out and handling can readily beperformed.

Moreover, the trench section 204 is previously formed on the glasssubstrate 201 and the surface is removed to have such a depth as toreach the trench section 204 by a method such as the CMP after themounting. Therefore, the isolation can be carried out very easily.

Furthermore, a structure in which the edge of the glass substrate 201 ispositioned on the inside of the edge of the silicon substrate 101provided with the IT-CCD and the surface of the silicon substrate 101 isexposed can be formed with high precision in a very simple process inwhich a concave portion is previously formed on the inside of the glasssubstrate and the removal is carried out to have the same depth by amethod such as etch back or CMP after bonding. In addition, thestructure can easily be formed with a high workability. Moreover, theindividual IT-CCDs can be formed by only isolation or polishing in astate in which an element formation surface is enclosed in a gap C bythe bonding. Consequently, it is possible to provide an IT-CCD whichrarely damages the element and has a high reliability.

In addition, the silicon substrate is thinned to have a depth ofapproximately ½ by the CMP. Therefore, a size and a thickness can bereduced. Furthermore, the thickness is reduced after the bonding to theglass substrate. Consequently, it is possible to prevent a deteriorationin a mechanical strength.

Referring to a connection to the outside, moreover, the bonding pad BPprovided on the silicon substrate constituting the IT-CCD substrate 100is exposed from the sealing section formed by the spacer 203S and theglass substrate 201. Therefore, the formation can easily be carried out.

According to the structure of the invention, thus, positioning iscarried out on a wafer level, and collective mounting and integrationare sequentially performed for isolation every IT-CCD. Consequently, itis possible to form a solid-state imaging device which can easily bemanufactured and has a high reliability.

While the wiring layer including the bonding pad is constituted by agold layer in the first embodiment, it is apparent that the gold layeris not restricted but another metal such as aluminum or anotherconductor layer such as silicide can be used.

Moreover, the microlens array can also be provided by forming atransparent resin film on the surface of a substrate and forming a lenslayer having a refractive index gradient in a predetermined depth by ionimplantation from the same surface.

For the spacer, furthermore, it is possible to properly select a42-alloy, metal, a glass, photosensitive polyimide and a polycarbonateresin in addition to the silicon substrate.

Moreover, it causes often generations of distortion that each of theIT-CCD substrate, spacer, and glass substrate has a differentcoefficient of linear thermal expansion. For preventing the generationsof distortion, or remaining the distortion within an allowable range ifthe distortion is generated, the temperature for bonding is set to aroom temperature or a temperature from 20 degree C. to 80 degree C. Asthe adhesive used for bonding, it is preferable to use, for example, anepoxy adhesive, an oxetanyl adhesive, silicon adhesive, acrylicadhesive, UV curing adhesive, visible curing adhesive, or such, so thatthe adhesive line may be thin in order to obtain a predeterminedadhesive force, prevent a permeation of water, and realize a highreliable bonding.

In the first embodiment, frequency of distortion is measured when atemperature for bonding is changed. In the experiment, the temperaturefor bonding is changed to 20 degree C., 25 degree C., 50 degree C., 80degree C., and 100 degree C. Then, at each of the temperature, frequencyof distortions is checked in each case of using a room temperaturesetting adhesive and a thermosetting adhesive. In the experiment, theadhesives mentioned above are applied for bonding of a glass substrateand a spacer and bonding of a spacer and an IT-CCD substrate.

According the experiment, in cases that the room temperature settingadhesive is applied at each temperatures, it is obtained almost sameresults of the case that the thermosetting adhesive. In these cases, at20 degree C. and 25 degree C., the generation of distortion almost neveroccurred. At 50 degree C., the generation of distortion within theallowable range sometimes occurred. At 80 degree C., the generation ofdistortion within the allowable range occurred very often. At 100 degreeC., the generation of distortion over the allowable range sometimesoccurred.

From the above-mentioned results of this experiment, it becomes clearthat the temperature for bonding is preferably set under 80 degree C.

Additionally, if the photo-curing adhesive (UV curing adhesive, visiblecuring adhesive, or such) is applied, the temperature for bonding is setequal to under 50 degree C. Therefore, the generation of distortionnever occurred and it is possible to obtain an excellent result.

Furthermore, a simulation for obtaining the optimum value of a distancebetween a sensor and a glass was carried out. Simulation conditions wereset to have an exit pupil of 3.5 mm, an F value of 3.5 and a refractiveindex of a glass substrate of 1.5.

First of all, in the case in which the lower surface of the glasssubstrate made a defect having a size of 5 μm, a distance between thelight receiving surface of a photodiode section of a solid-state imagingelement and the lower surface of the glass substrate was changed and therelationship between the distance and the density of a shadow in whichthe defect is projected onto the solid-state imaging element wasmeasured. The result of the simulation is shown in the following Table1.

As is apparent from the Table 1, if the distance between the lightreceiving surface and the glass substrate is 0.07 mm, the density of theshadow is 4.7% which is more than 4%. Accordingly, it is desirable thatthe distance between the light receiving surface and the glass substrateshould be equal to or more than 0.08 mm.

TABLE 1 Distance (mm) between lower surface and Density oflight-receiving surface shadow (%) 0.01 0.02 0.03 0.04 0.05 0.06 8.30.07 4.1 0.08 4.8 0.09 3.7 0.01 3.2 0.1 2.5

Moreover, Table 2 shows a result obtained by measuring the relationshipbetween a distance between the light receiving surface and the uppersurface of the glass substrate and the density of a shadow in which adefect is projected onto a solid-state imaging element in the case inwhich a defect having a size of 20 μm is present on the upper surface ofthe glass substrate.

TABLE 2 Distance (mm) between Light-receiving surface and upper Densityof surface shadow (%) 0.3 8.3 0.4 5.1 0.5 3.5 0.6 2.5 0.7 1.9 0.8 1.50.9 1.2 1.0 1.0

As is apparent from the Table, in the case in which the distance betweenthe light receiving surface and the upper surface of the glass substrateis equal to or less than 0.4 mm, the density of the shadow is equal toor more than 4%.

In the case in which a background is uniform, for example, a sky, thedensity of the shadow projected onto the light receiving surface of thesolid-state imaging element is 4% and the shadow is started to be seenover a printed image. When the density of the shadow is set to be lessthan 4%, therefore, there is no influence of such a defect.

From the result of the experiment described above, an interval betweenthe surface of the glass substrate and the CCD is to be 0.08 mm. It isapparent that the interval should be desirably set to be 0.12 mm.

Moreover, it is sufficient that the distance between the light receivingsurface and the upper surface of the glass substrate is equal to or morethan 0.5 mm even if a dust having a size of 20 μm is put on the surfaceof the glass substrate.

In the same simulation, furthermore, there was obtained a result inwhich it is sufficient that the distance from the light receivingsurface and the upper surface of the glass substrate is equal to or morethan 1.5 mm with an F value of 11. From the result described above, whenthe distance between the light receiving surface and the upper surfaceof the glass substrate is set to be 0.5 to 1.5 mm, an invisible dust canbe prevented from making an image noise if any. Moreover, it isdesirable that the distance between the light receiving surface and thesurface of the glass substrate should be set to be 1.5 mm or less inconsideration of the problem of the size of the device, a strength and adeterioration in the productivity of dicing because of a great glassthickness.

Second Embodiment

Next, a second embodiment of the invention will be described.

In the first embodiment, the cut trench 104 is previously formed on thesilicon substrate 101 constituting the IT-CCD substrate 100, the IT-CCDsubstrate 100 and the sealing cover glass 200 are bonded to each otherby using the spacer 203S formed of the same silicon as that of the solidstate image pick-up element substrate 100, and the CMP is then carriedout to reach the cut trench 104 from the back side so that the thicknessof the silicon substrate 101 is reduced and the isolation is executedsimultaneously. This example is characterized in that the isolation iscarried out without forming the cut trench on the silicon substrate 101and an exact thickness is maintained. Other portions are formed in thesame manner as those in the first embodiment.

More specifically, FIGS. 4A to 4D show bonding and isolating steps. Asshown in FIG. 4A, the silicon substrate 101 is set to be a startingmaterial, and a channel stopper layer is formed, a channel region isformed and an element region such as an electric charge transferelectrode or such is formed by using an ordinary silicon process.Moreover, there is formed a bonding pad BP which is provided with awiring layer on a surface and comprises a gold layer for an externalconnection.

As shown in FIG. 4B, then, an alignment is carried out with an alignmentmark formed in the peripheral edge portion of each substrate, and asealing cover glass 200 is mounted on an IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207. In this case, since a cut trench is notformed on the silicon substrate 101, a mechanical strength is great.

As shown in FIG. 4C, thereafter, CMP (chemical mechanical polishing) iscarried out from the back side of a glass substrate 201 and the backside of the glass substrate 201 is removed to reach the trench section204 in the same manner as in the first embodiment.

By this step, it is possible to carry out individual isolationsimultaneously with a reduction in the thickness of the glass substrate.

As shown in FIG. 4D, furthermore, cutting is carried out by means of adiamond blade (a grindstone) from the glass substrate 201 side so thatisolation into individual solid-state imaging devices is performed.

According to this method, it is possible to form a device which isthicker than the solid-state imaging device obtained in the firstembodiment and has a high reliability.

Third Embodiment

Next, a third embodiment of the invention will be described.

In the first embodiment, the cut trench 104 is previously formed on thesilicon substrate 101 constituting the IT-CCD substrate 100 and the CMPis then carried out to reach the cut trench 104 from the back side afterthe bonding so that the thickness of the silicon substrate 101 isreduced and the isolation is executed simultaneously. In this example, adummy plate 301 formed by a silicon substrate having a thickness of 50to 700 μm is stuck to the back side of the silicon substrate 101 throughan adhesive layer 302 and a cut trench 304 having such a depth as toreach the dummy plate 301 is formed after the sticking.

At the isolating step, accordingly, the adhesive layer 302 may besoftened to eliminate an adhesiveness, thereby removing the dummy plate301.

Other portions are formed in the same manner as those in the firstembodiment.

More specifically, FIGS. 5A to 5E show the bonding and isolating steps.The silicon substrate 101 is set to be a starting material, and achannel stopper layer is formed, a channel region is formed and anelement region such as an electric charge transfer electrode . . . isformed by using an ordinary silicon process. Moreover, there is formed abonding pad BP which is provided with a wiring layer on a surface andcomprises a gold layer for an external connection. As shown in FIG. 5A,then, the dummy plate 301 formed by a silicon substrate is stuck to theback side of the silicon substrate 101 through the adhesive layer 302.

As shown in FIG. 5B, thereafter, the cut trench 304 is formed by using adiamond blade (a grindstone) from the element formation surface side ofthe silicon substrate 101.

As shown in FIG. 5C, subsequently, an alignment is carried out with analignment mark (not shown) formed on the peripheral edge portions of anIT-CCD substrate 100 and a sealing cover glass 200, and the sealingcover glass 200 is mounted on the IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207. The glass substrate comprising a spacer 203Sand the adhesive layer 207 formed at the steps in FIGS. 2A to 2C isused. In this case, although the cut trench 304 is formed to penetratethrough the silicon substrate 101, a mechanical strength is greatbecause of the fixation of the dummy plate 301.

As shown in FIG. 5D, thereafter, CMP (chemical mechanical polishing) iscarried out from the back side of a glass substrate 201 and the backside of the glass substrate 201 is removed to reach the trench section204 in the same manner as in the first embodiment.

By this step, it is possible to carry out individual isolationsimultaneously with a reduction in the thickness of the glass substrate.

As shown in FIG. 5E, furthermore, the adhesive layer 302 provided on theback face of the silicon substrate 101 is softened to remove the dummyplate 301, thereby carrying out isolation into individual solid-stateimaging devices. It is desirable that a material having a lowersoftening point than that of the adhesive layer 202 for bonding thespacer 203S to the glass substrate 201 should be selected for theadhesive layer 302.

According to this method, the IT-CCD substrate 100 is subjected todicing over the dummy plate 301 prior to the bonding. As compared withthe solid-state imaging device obtained in the first embodiment,therefore, a stress to be applied after the bonding is lessened and amanufacturing yield can be more enhanced. Moreover, it is possible toenhance the reliability of an IT-CCD.

While the bonding of the glass substrate to the space may be carried outby using the adhesive layer in the embodiments, it is also possible toapply anode bonding or surface activating cold bonding. According to theanode bonding, it is possible to easily obtain firm bonding.

Moreover, while the CMP has been used in the reduction in the thicknessof the glass substrate in the first to third embodiments, it is alsopossible to apply a grinding method, a polishing method and an etchingmethod.

Fourth Embodiment

Next, a fourth embodiment of the invention will be described.

In the first embodiment, the trench section 204 is previously formed inthe region corresponding to the element region of the glass substrate201 constituting the sealing cover glass 200, the IT-CCD substrate isbonded to the glass substrate and the CMP is then carried out from theback side of the glass substrate 201, thereby performing isolation intothe individual elements. In the embodiment, a glass substrate having noconcave portion is bonded and the periphery of a cutting line isevaporated by dicing or laser during isolation, and the edge of theglass substrate 201 of each IT-CCD is regulated to be placed on theinside of the edge of the silicon substrate 101 constituting the IT-CCDsubstrate 100. Other portions are formed in the same manner as those inthe first embodiment.

More specifically, in this method, the processing of the glass substrateis completed when the spacer is formed as shown in FIG. 2B. A glasssubstrate obtained by bonding a spacer 203S to the plate-shaped glasssubstrate 201 is used as a starting material.

As shown in FIG. 6A, the silicon substrate 101 (a 6-inch wafer is used)is prepared in advance and a cut trench 104 is formed by a method suchas etching in a region corresponding to an isolating line for isolationinto each IT-CCD. By using an ordinary silicon process, then, a channelstopper layer is formed, a channel region is formed and an elementregion such as an electric charge transfer electrode . . . is formed.Moreover, there is formed a bonding pad BP which is provided with awiring layer on a surface and comprises a gold layer for an externalconnection.

As shown in FIG. 6B, then, an alignment is carried out with an alignmentmark formed in the peripheral edge portion of each substrate, and asealing cover glass 200 is mounted on the IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207.

As shown in FIG. 6C, thereafter, the periphery of a cutting line isevaporated from the back side of the glass substrate by dicing or laserand the edge of the glass substrate 201 of each IT-CCD is regulated tobe placed on the inside of the edge of the silicon substrate 101constituting the IT-CCD substrate 100.

As shown in FIG. 6D, furthermore, the CMP is carried out from the backside of the silicon substrate 101 in the same manner to carry outpolishing up to the cut trench 104 portion, thereby performing isolationinto individual solid-state imaging devices. Moreover, this step is notrestricted to the CMP but grinding, polishing and etching may be used.

Thus, collective mounting is carried out and individual isolation isthen performed. Therefore, manufacture can easily be carried out andhandling can readily be performed.

Furthermore, the trench section 204 is not previously formed on theglass substrate 201 but the edge is removed by the evaporation throughthe dicing or the laser. Consequently, the isolation can be carried outvery easily.

Thus, the structure in which the edge of the glass substrate 201 isplaced on the inside of the edge of the silicon substrate 101 mounting aCCD and the surface of the silicon substrate 101 is exposed can beformed with high precision by a simple process for carrying out theevaporation through the dicing or the laser.

In addition, the glass substrate maintains the same thickness till theisolating step. Consequently, it is possible to reduce a warp and astrain.

Fifth Embodiment

Next, a fifth embodiment of the invention will be described.

In the fourth embodiment, the cut trench 104 is previously formed on thesilicon substrate 101 constituting the IT-CCD substrate 100 and the CMPis then carried out to reach the cut trench 104 from the back side afterthe bonding so that the thickness of the silicon substrate 101 isreduced and the isolation is executed simultaneously. This example ischaracterized in that a cut trench is not formed on the siliconsubstrate 101 but isolation is carried out and an exact thickness ismaintained. In the same manner as the fourth embodiment, moreover,bonding is carried out without the formation of a trench section 204 ona glass substrate 201 and an edge portion is evaporated during theisolation. Other portions are formed in the same manner as those in thefirst embodiment.

More specifically, FIGS. 7A to 7D show the bonding and isolating steps.As shown in FIG. 7A, the silicon substrate 101 is set to be a startingmaterial, and a channel stopper layer is formed, a channel region isformed and an element region such as an electric charge transferelectrode, or such is formed by using an ordinary silicon process.Moreover, there is formed a bonding pad BP which is provided with awiring layer on a surface and comprises a gold layer for an externalconnection.

As shown in FIG. 7B, then, an alignment is carried out with an alignmentmark formed in the peripheral edge portion of each substrate, and asealing cover glass 200 is mounted on the IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207. In this case, since neither a cut trench nora concave portion is formed on both the silicon substrate 101 and theglass substrate 201, a mechanical strength is great.

As shown in FIG. 7C, then, the periphery of the cutting line isevaporated from the back side of the glass substrate 201 by dicing orlaser and the edge of the glass substrate 201 of each IT-CCD isregulated to be placed on the inside of the edge of the siliconsubstrate 101 constituting the IT-CCD substrate 100 and isolation isthus performed in the same manner as in the fourth embodiment.

As shown in FIG. 7D, finally, cutting is carried out by means of adiamond blade (a grindstone) from the glass substrate 201 side so thatthe isolation into individual solid-state imaging devices is performed.

According to the method, it is possible to form a device which isthicker than the solid-state imaging device obtained in the firstembodiment and has a high reliability.

Sixth Embodiment

Next, a sixth embodiment of the invention will be described.

In the fourth embodiment, the cut trench 104 is previously formed on thesilicon substrate 101 constituting the IT-CCD substrate 100 and the CMPis then carried out from the back side so that the isolation isexecuted. In the fifth embodiment, moreover, the cut trench 104 ispreviously formed on the silicon substrate 101 constituting the IT-CCDsubstrate 100 and cutting is carried out by means of a diamond blade (agrindstone) after bonding, thereby isolating the silicon substrate 101.In this example, a dummy plate 301 formed by a silicon substrate havinga thickness of 50 to 700 μm is stuck to the back side of the siliconsubstrate 101 through an adhesive layer 302 and a cut trench 304 havingsuch a depth as to reach the dummy plate 301 is formed after thesticking in such a manner that the isolation of the silicon substrate101 is not required after the sticking of a sealing cover glass 200 tothe IT-CCD substrate 100.

At the isolating step, accordingly, the adhesive layer 302 can besoftened to remove the dummy plate 301.

Other portions are formed in the same manner as those in the fourth andfifth embodiments.

More specifically, FIGS. 8A to 8E show the bonding and isolating steps.The silicon substrate 101 is set to be a starting material, and achannel stopper layer is formed, a channel region is formed and anelement region such as an electric charge transfer electrode, or such isformed by using an ordinary silicon process. Moreover, there is formed abonding pad BP which is provided with a wiring layer on a surface andcomprises a gold layer for an external connection. As shown in FIG. 8A,then, the dummy plate 301 formed by a silicon plate having a thicknessof 50 to 700 μm is stuck to the back side of the silicon substrate 101through the adhesive layer 302.

As shown in FIG. 8B, thereafter, the cut trench 304 is formed by using adiamond blade (a grindstone) from the element formation surface side ofthe silicon substrate 101.

As shown in FIG. 8C, subsequently, an alignment is carried out with analignment mark (not shown) formed in the peripheral edge portions of theIT-CCD substrate 100 and the sealing cover glass 200, and the sealingcover glass 200 is mounted on the IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207. The glass substrate comprising the spacer203S and the adhesive layer 207 formed at the steps in FIGS. 8A to 8C isused. In this case, although the cut trench 304 is formed to penetratethrough the silicon substrate 101, a mechanical strength is greatbecause of the fixation of the dummy plate 301.

As shown in FIG. 8D, then, the periphery of a cutting line is evaporatedfrom the back side of a glass substrate 201 by dicing or laser and theedge of the glass substrate 201 of each IT-CCD is regulated to be placedon the inside of the edge of the silicon substrate 101 constituting theIT-CCD substrate 100, and isolation is thus performed in the same manneras in the fourth embodiment.

As shown in FIG. 8E, furthermore, the adhesive layer 302 provided on theback face of the silicon substrate 101 is softened to remove the dummyplate 301, thereby performing the isolation into the individualsolid-state imaging devices. It is desirable that a material having alower softening point than that of the adhesive layer 202 for bondingthe spacer 203S to the glass substrate 201 should be selected for theadhesive layer 302.

According to this method, the IT-CCD substrate 100 is subjected todicing over the dummy plate 301 prior to the bonding. As compared withthe solid-state imaging device obtained in the first embodiment,therefore, a stress to be applied after the bonding is lessened and amanufacturing yield can be more enhanced. Moreover, it is possible toenhance the reliability of an IT-CCD.

In the fourth to sixth embodiments, the glass substrate may be cut byscribing or etching.

Seventh Embodiment

Next, a seventh embodiment of the invention will be described.

In the sixth embodiment, the dummy plate 301 formed by a silicon platehaving a thickness of 50 to 700 μm is stuck to the back side of thesilicon substrate 101 through the adhesive layer 302 and the cut trench304 having such a depth as to reach the dummy plate 301 is formed afterthe sticking, and the adhesive layer 302 is softened to remove the dummyplate 301, thereby carrying out the isolation at the step of performingthe isolation into the individual IT-CCDs after the bonding to the glasssubstrate 201. In the embodiment, a dummy plate 401 formed by a glassplate having a thickness of 50 to 700 μm is stuck to the back side of aglass substrate 201 through an adhesive layer 402 and a concave portion404 having such a depth as to reach the dummy plate 401 is formed afterthe sticking. At the step of performing the isolation into individualIT-CCDs after the bonding to the glass substrate 201, the adhesive layer402 is softened to remove the dummy plate 401, thereby carrying out theisolation. Other portions are formed in the same manner as those in thesixth embodiment.

Referring to the silicon substrate 101 constituting an IT-CCD substrate100, in the same manner as in the second and fourth embodiments, asilicon substrate on which neither a cut trench nor a dummy plate ispreviously formed is used and is finally cut and isolated by means of adiamond blade (a grindstone).

More specifically, the bonding and isolating steps are shown in FIGS. 9Ato 9E.

First of all, as shown in FIG. 9A, the dummy plate 401 formed by a glassplate having a thickness of 50 to 700 μm is stuck to the back side ofthe glass substrate 201 through the adhesive layer 402, and furthermore,a silicon substrate 203 is stuck through an adhesive layer 202 after thesticking and the silicon substrate 203 is formed into a spacer 203S byan etching method using photolithography in the same manner as in thefirst embodiment illustrated in FIGS. 2A to 2C.

As shown in FIG. 9B, then, a region corresponding to an IT-CCD isselectively etched again and a concave portion 404 having such a depthas to reach the dummy plate 401 is formed in the same manner as in thefirst embodiment. Moreover, the formation may be carried out by halfdicing.

Furthermore, the silicon substrate 101 is set to be a starting material,and a channel stopper layer is formed, a channel region is formed and anelement region such as an electric charge transfer electrode . . . isformed by using an ordinary silicon process. Moreover, there is formed abonding pad BP which is provided with a wiring layer on a surface andcomprises a gold layer for an external connection. As shown in FIG. 9Cthen, an alignment is carried out with an alignment mark (not shown)formed in the peripheral edge portions of the IT-CCD substrate 100 thusformed and a sealing cover glass 200, and the sealing cover glass 200having the dummy plate 401 is mounted on the IT-CCD substrate 100 formedas described above and is thus heated so that both of them areintegrated with an adhesive layer 207.

As shown FIG. 9D, thereafter, heating is carried out to soften theadhesive layer 402, thereby removing the dummy plate 401. Thus, theglass substrate 201 is isolated.

As shown in FIG. 9E, subsequently, the IT-CCD substrate formed by thesilicon substrate 101 is cut by using a diamond blade (a grindstone) tocarry out isolation into individual solid-state imaging devices.

According to this method, the glass substrate 201 constituting thesealing cover glass 200 is isolated by dicing or etching in advance overthe dummy plate 401 prior to the bonding. As compared with the glasssubstrate obtained in the first embodiment, therefore, a stress to beapplied after the bonding is lessened and a manufacturing yield can bemore enhanced. Moreover, it is possible to enhance the reliability of anIT-CCD.

Eighth Embodiment

Next, an eighth embodiment of the invention will be described.

In the seventh embodiment, the bonding is exactly carried out withoutpreviously forming the cut trench 104 on the silicon substrate 101constituting the IT-CCD substrate 100 and the cutting is finallyperformed by using the diamond blade (the grindstone). This example ischaracterized in that the cut trench 104 is previously formed on thesilicon substrate 101 constituting the IT-CCD substrate 100 and CMP iscarried out to reach the cut trench 104 from the back side afterbonding, thereby performing isolation while reducing the thickness ofthe silicon substrate 101. Other portions are formed in the same manneras those in the seventh embodiment.

More specifically, FIGS. 10A to 10D show the bonding and isolatingsteps. As shown in FIG. 10A, the silicon substrate 101 provided with thecut trench 104 is set to be a starting material, and a channel stopperlayer is formed, a channel region is formed and an element region suchas an electric charge transfer electrode . . . is formed by using anordinary silicon process. Moreover, there is formed a bonding pad BPwhich is provided with a wiring layer on a surface and comprises a goldlayer for an external connection.

As shown in FIG. 10B, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the sealing cover glass 200 having the dummy substrate 401 formed asin the seventh embodiment is mounted on the IT-CCD substrate 100 andboth of them are integrated by cold direct bonding. While the formationis carried out by the direct bonding without using an adhesive layer,the bonding may be performed with an adhesive layer 207.

As shown in FIG. 10C, thereafter, CMP (chemical mechanical polishing) iscarried out from the back side of the IT-CCD substrate 100 and the backside of the silicon substrate 101 is removed to reach the cut trench104.

By this step, it is possible to individually isolate the IT-CCDsubstrate simultaneously with a reduction in a thickness thereof.Herein, grinding, polishing or etching may be used in place of the CMP.

As shown in FIG. 10D, subsequently, heating is carried out to soften anadhesive layer 402, thereby removing the dummy substrate 401. By thisstep, the isolation can easily be carried out so that the solid-stateimaging device is formed.

Ninth Embodiment

Next, a ninth embodiment of the invention will be described.

In the seventh embodiment, the bonding is exactly carried out withoutpreviously forming the cut trench 104 on the silicon substrate 101constituting the IT-CCD substrate 100 and the cutting is finallyperformed by using the diamond blade (the grindstone). In this example,a dummy plate is previously formed on the silicon substrate 101constituting the IT-CCD substrate 100 and a glass substrate 201constituting a sealing cover glass 200, and the cut trench 104 and atrench section 204 are previously formed prior to bonding, and adhesivelayers 402 and 302 are softened to remove dummy plates 301 and 401,thereby carrying out isolation after the bonding. Other portions areformed in the same manner as those in the seventh embodiment.

More specifically, FIGS. 11A to 11D show the bonding and isolatingsteps. As shown in FIG. 11A, the silicon substrate 101 having the dummyplate 301 stuck thereto is set to be a starting material, and a channelstopper layer is formed, a channel region is formed and an elementregion such as an electric charge transfer electrode is formed by usingan ordinary silicon process. Moreover, there is formed a bonding pad BPwhich is provided with a wiring layer on a surface and comprises a goldlayer for an external connection.

As shown in FIG. 11B, then, a cut trench 304 is formed to reach thedummy plate 301.

The dummy plate 401 is stuck to the sealing cover glass 200 in the samemanner as in the seventh and eighth embodiments, and furthermore, aconcave portion 404 is formed by etching or dicing.

As shown in FIG. 11C, thereafter, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the sealing cover glass 200 having the dummy substrate 401 formed asin the seventh embodiment is mounted on the IT-CCD substrate 100 havingthe dummy plate 301 and heating is carried out to integrate both of themwith an adhesive layer 207.

As shown in FIG. 11D, subsequently, the adhesive layers 402 and 203 aresoftened to remove the dummy plates 301 and 401 so that isolation intoindividual IT-CCDs can be carried out.

These adhesive layers 302 and 402 to be used may have almost equalsoftening temperatures and may be thus softened at the same time.

Moreover, one of the adhesive layers 302 and 402 may be removed to carryout fixation by taping, and the other adhesive layer 302 or 402 may besoftened to be removed.

According to such a structure, an extra stress is not applied after thebonding. Therefore, it is possible to reduce a damage on the IT-CCD.

Tenth Embodiment

Next, a tenth embodiment of the invention will be described.

In the first to ninth embodiments, the silicon substrate 203 to be aspacer is stuck to the glass substrate 201 through an adhesive, and thesilicon substrate 203 is subjected to the patterning to form the cuttrench 204 by an etching method using photolithography in the formationof the sealing cover glass 200 provided with the spacer 203S as shown inFIGS. 2A and 2B. In the embodiment, as shown in FIGS. 12A and 12B, thespacer 203S is etched over a dummy plate by using a dummy plate 501 andsticking to the glass substrate 201 is then carried out with an adhesivelayer 202. Other portions are formed in the same manner as those in theembodiments.

More specifically, as shown in FIG. 12A, the silicon substrate 203 to bethe spacer is stuck to the dummy plate 501 formed by a silicon substratethrough an adhesive layer 502 having a softening temperature ofapproximately 50 to 150 degree C. Then, the silicon substrate 203 issubjected to patterning by an etching method using photolithography,thereby forming the spacer 203S.

As shown in FIG. 12B, then, the glass substrate 201 is stuck to thespacer 203S side through the adhesive layer 202 having a softeningtemperature of approximately 100 to 200 degree C.

Thus, the glass substrate 201 is stuck and heating is then carried outup to approximately 50 to 150 degree C. to soften the adhesive layer502, thereby removing the dummy plate 501. Consequently, the sealingcover glass 200 having a spacer is formed.

According to such a method, it is not necessary to process the spacerover the glass substrate. Consequently, it is possible to prevent ascratch from being made on the glass substrate 201, thereby causing ablur.

It is sufficient that the adhesive layer 502 for sticking the dummyplate is resistant to a baking temperature in a photolithographicprocess. Moreover, since the dummy plate 501 needs to be removed, theadhesive layer 202 for sticking the spacer 203S to the glass substrate201 needs to have a much higher softening temperature than that of theadhesive layer 502.

In the case in which a concave portion is to be formed on the glassplate, moreover, it is preferable that the trench section 204 should beformed by dicing or etching prior to the sticking as shown in FIG. 13.Furthermore, it is preferable that a concavo-convex portion should beformed by the dicing or the etching after the dummy plate 501 isremoved.

The bonding step and the cutting step are the same as those in FIGS. 3to 5 described in the first to third embodiments.

Eleventh Embodiment

Next, an eleventh embodiment of the invention will be described.

While the spacer 203S is separately formed and is stuck through theadhesive layer in the first to tenth embodiments, a concave portion 205is formed and a spacer 206 is thus provided on a glass substrate 201 byan etching method using photolithography in this example. Other portionsare formed in the same manner as those in the embodiments.

More specifically, as shown in FIG. 14A, the glass substrate 201 isprepared.

As shown in FIG. 14B, then, the concave portion 205 is formed by theetching method using the photolithography. Consequently, a glasssubstrate comprising the spacer 206 is formed.

According to such a structure, the spacer 206 is integrally formed.Therefore, manufacture can easily be carried out and a shift is notgenerated, and furthermore, there is no possibility that a strain mightbe generated in a bonded portion.

Twelfth Embodiment

Next, a twelfth embodiment of the invention will be described.

While the description has been given to the method of forming thesealing cover glass 200 having the spacer 206 formed integrallytherewith in the eleventh embodiment, it is also possible to form atrench section 204 by etching as shown in FIGS. 15A to 15C.

In this example, a concave portion 205 is formed on a glass substrate201 by an etching method using photolithography so that the spacer 206is formed integrally. Then, the trench section 204 is formed.Consequently, the trench section 204 of the glass substrate forpositioning the edge of the sealing cover glass 200 on the inside of theedge of an IT-CCD substrate 100 is formed by the etching. Accordingly,the generation of a strain is reduced and the isolating step can bethereby carried out easily.

More specifically, as shown in FIG. 15A, the glass substrate 201 isprepared.

As shown in FIG. 15B, then, the concave portion 205 is formed on theglass substrate 201 by the etching method using the photolithography.

As shown in FIG. 15C, thereafter, the etching is further carried outmore deeply by the etching method using the photolithography to form thetrench section 204. Thus, the spacer 206 is formed integrally.

Although these processing steps require the etching twice because ofdifferent etching depths, it is also possible to form a resist patternto be a mask in a two-layer structure, to etch the trench section 204for forming the spacer, and to then remove only the resist pattern of anupper layer selectively, thereby carrying out the etching using, as amask, only the resist pattern on the lower layer side.

Moreover, the bonding and isolating steps are the same as those in FIGS.3 to 5 described in the first to third embodiments.

Thirteenth Embodiment

Next, a thirteenth embodiment of the invention will be described.

While the description has been given to the method of forming thesealing cover glass 200 having the spacer 206 formed integrallytherewith in the eleventh and twelfth embodiments, it is also possibleto stick a silicon substrate 203 for a spacer to a glass substrate 201provided with a trench section 204 and to selectively remove the siliconsubstrate 203 by an etching method using photolithography, therebyforming a spacer 203S as shown in FIGS. 16A to 16D. Other portions areformed in the same manner as those in the eleventh and twelfthembodiments.

In this example, the trench section 204 is formed on the glass substrate201 by the etching method using the photolithography and the spacer 206is formed integrally, and furthermore, the trench section 204 of theglass substrate 201 for positioning the edge of the sealing cover glass200 on the inside of the edge of an IT-CCD substrate 100 is formed bythe etching. Accordingly, the generation of a strain can be reduced andthe isolating step can easily be carried out.

More specifically, as shown in FIG. 16A, the glass substrate 201 isprepared.

As shown in FIG. 16B, then, the trench section 204 is formed on theglass substrate 201 by the etching method using the photolithography.

As shown in FIG. 16C, thereafter, the silicon substrate 203 to be asubstrate for a spacer is stuck through an adhesive layer 202.

As shown in FIG. 16D, furthermore, the spacer 203S is formed integrallyby the etching method using the photolithography.

By this method, similarly, it is possible to form the sealing coverglass 200 having a spacer with high precision and a high reliability.

The bonding and isolating steps are the same as those in FIGS. 3 to 5described in the first to third embodiments.

Fourteenth Embodiment

Next, a fourteenth embodiment of the invention will be described.

In the thirteenth embodiment, the silicon substrate 203 to be a spaceris stuck to the glass substrate 201 through an adhesive, and the siliconsubstrate 203 is subjected to the patterning to form the sealing coverglass 200 by an etching method using photolithography so that thesealing cover glass 200 is formed as shown in FIGS. 16A to 16D. In theembodiment, as shown in FIGS. 17A and 17B, a spacer 203S is subjected tothe patterning over a dummy plate by using a dummy plate 501 andsticking to the glass substrate 201 provided with a trench section 204is then carried out with an adhesive layer 202. Other portions areformed in the same manner as those in the thirteenth embodiment.

More specifically, the silicon substrate 203 to be the spacer is stuckto the dummy plate 501 formed by a silicon substrate through an adhesivelayer 502 having a softening temperature of approximately 50 to 150degree C. As shown in FIG. 17A, then, the silicon substrate 203 issubjected to the patterning by the etching method using thephotolithography, thereby forming the spacer 203S.

As shown in FIG. 17B, thereafter, the glass substrate 201 having thetrench section 204 is stuck to the spacer 203S side through the adhesivelayer 202 having a softening temperature of approximately 100 to 200degree C.

Thus, the glass substrate 201 is stuck and heating is then carried outup to approximately 50 to 150 degree C. to soften the adhesive layer502, thereby removing the dummy plate 501. Consequently, the sealingcover glass 200 having a spacer is formed as shown in FIG. 17C.

According to such a method, it is not necessary to process the spacerover the glass substrate. Consequently, it is possible to prevent ascratch from being made on the glass substrate 201, thereby causing ablur.

The bonding and isolating steps are the same as those in FIGS. 3 to 5described in the first to third embodiments.

Fifteenth Embodiment

Next, a fifteenth embodiment of the invention will be described.

In the twelfth to fourteenth embodiments, the description has been givento the process for manufacturing the sealing cover glass 200 having thespacer which comprises the trench section 204 for easily carrying outthe isolating step. The fifteenth to seventeenth embodiments arecharacterized in that sticking to a dummy plate 401 is carried out andthe trench section 204 is formed so that the glass substrate itself ispreviously isolated prior to the bonding, and an adhesive layer 402 issoftened after the bonding, thereby removing the dummy plate andcarrying out isolation into individual IT-CCDs. Other portions areformed in the same manner as those in the fourteenth embodiment.

While the trench section 204 is formed on the glass substrate of asealing cover glass of a spacer member type and the glass substrate caneasily be isolated in the embodiments shown in FIGS. 15A to 15C, thedummy plate 401 formed by the glass substrate is used through theadhesive layer 402, and the dummy plate is removed so that the isolationcan easily be carried out as shown in FIG. 18.

A glass plate is used as a starting material, and the trench section 204and a spacer 26 are formed by an etching method using photolithographyafter the dummy plate is stuck.

According to such a structure, it is sufficient that the adhesive layer402 is only softened by heating during division and the division can bethereby carried out very easily.

The bonding and isolating steps are the same as those described in theseventh to ninth embodiments.

Sixteenth Embodiment

Next, a sixteenth embodiment of the invention will be described.

This example is characterized in that the glass substrate 201 of such atype as to stick the spacer 203S to the glass plate having a concaveportion described in the thirteenth embodiment is stuck to a dummy plate401 and a trench section 204 is formed so that the glass substrateitself is previously isolated prior to the bonding, and an adhesivelayer 402 is softened after the bonding, thereby removing the dummyplate and carrying out isolation into individual IT-CCDs. Other portionsare formed in the same manner as those in the thirteenth embodiment.

In the embodiment, the dummy plate 401 is stuck through the adhesivelayer 402 to the spacer member type glass plate according to theembodiment shown in FIGS. 16A and 16B and the trench section 204 isformed as shown in FIGS. 19A and 19B.

A glass plate is used as a starting material, and the trench section 204having such a depth as to reach the dummy plate and the spacer 203S areformed in the same manner as in the thirteenth embodiment after thedummy plate is stuck.

More specifically, as shown in FIG. 19A, the dummy substrate 401 isstuck to the glass substrate 201 through the adhesive layer 402.

As shown in FIG. 19B, then, the glass substrate 201 is etched by usingphotolithography and the trench section reaching the dummy substrate 401from the surface of the glass substrate 201 is formed.

As shown in FIG. 19C, thereafter, a silicon substrate 203 for the spaceris stuck through an adhesive layer 202.

As shown in FIG. 19D, subsequently, the silicon substrate 203 isselectively removed by the etching method using the photolithography toform the spacer 203S.

According to such a structure, bonding to an IT-CCD substrate 100 iscarried out, and then, the adhesive layer 402 is only softened byheating in dicing. Thus, division can be carried out very easily.

The bonding and isolating steps are the same as those described in theseventh to ninth embodiments.

Seventeenth Embodiment

Next, a seventeenth embodiment of the invention will be described.

This example is characterized in that the glass substrate 201 of such atype as to stick the spacer 203S patterned over the dummy plate 501 tothe glass plate having a concave portion described in the fourteenthembodiment (FIG. 17) is stuck to a dummy plate 401 and a trench section204 is formed so that the glass substrate itself is previously isolatedprior to the bonding, and an adhesive layer 402 is softened after thebonding, thereby removing the dummy plate and carrying out isolationinto individual IT-CCDs. Other portions are formed in the same manner asthose in the fourteenth embodiment.

In the embodiment, the dummy plate 401 is stuck to a spacer stickingtype glass plate according to the embodiment shown in FIGS. 17A and 17Bthrough the adhesive layer 402 as shown in FIGS. 20A to 20C.

A glass plate is used as a starting material, and the trench section 204having such a depth as to reach the dummy plate and the spacer 203S areformed in the same manner as in the fifteenth embodiment after the dummyplate is stuck.

More specifically, the silicon substrate 203 to be the spacer is stuckto a dummy plate 501 formed by a silicon substrate through an adhesivelayer 502, and then, the silicon substrate 203 is subjected topatterning by an etching method using photolithography, thereby formingthe spacer 203S as shown in FIG. 20A.

As shown in FIG. 20B, thereafter, the glass substrate 201 having thetrench section 204 formed to reach the dummy plate 401 is stuck to thespacer 203S side through an adhesive layer 202.

Thus, the glass substrate 201 is stuck and the adhesive layer 502 isthen softened to remove the dummy plate 501 so that a sealing coverglass 200 having a spacer is formed as shown in FIG. 20C.

According to such a structure, the adhesive layer 402 is only softenedby heating during division so that the dummy plate 401 can be removedreadily and the division can be carried out very easily.

The bonding and isolating steps are the same as those described in theseventh to ninth embodiments.

Eighteenth Embodiment

Next, an eighteenth embodiment of the invention will be described.

While the description has been given to the example in which the spaceris formed on the translucent substrate in the first to seventeenthembodiments, there will be described an example in which a spacer isformed on the IT-CCD substrate side in the following eighteenth totwenty-second embodiments.

In this example, a spacer 106S is formed integrally with a siliconsubstrate 101 constituting the IT-CCD substrate. Other portions areformed in the same manner as those in the embodiments.

First of all, a resist pattern is formed on the surface of the siliconsubstrate 101 by photolithography as shown in FIG. 21A and a concaveportion 105 is formed using the resist pattern as a mask by selectiveetching so that the spacer 106S is formed as shown in FIG. 21B.

As shown in FIG. 21C, then, a channel stopper layer is formed, a channelregion is formed and an element region such as an electric chargetransfer electrode . . . is formed in an element formation regionsurrounded by the spacer 106S by using an ordinary silicon process.Moreover, there is formed a bonding pad BP which is provided with awiring layer on a surface and comprises a gold layer for an externalconnection.

Thereafter, a glass substrate 201 provided with a trench section 204 isprepared as shown in FIG. 21D and an alignment is carried out oppositeto the element formation surface of the IT-CCD substrate 100 and theglass substrate 201 is integrated as shown in FIG. 21E. The integrationis firmly carried out by heating an adhesive layer 107 applied to thesurface of the spacer 106S.

As shown in FIG. 21F, finally, the glass substrate side and the IT-CCDsubstrate side are thinned by CMP so that isolation into the IT-CCDs canbe carried out. The thinning step is not restricted to the CMP but canbe executed by grinding, polishing or etching.

In the case in which the trench section 204 is not formed on the glasssubstrate, moreover, cutting is carried out through dicing or laser sothat the isolation can be performed with a high workability. In the casein which a cut trench 104 is not formed on the silicon substrate 101,furthermore, the cutting is carried out by using a diamond blade so thatthe isolation can be performed with a high workability.

According to this method, the spacer is formed integrally with theIT-CCD substrate. Therefore, it is possible to form a solid-stateimaging device having a high reliability without generating a strain ina bonded portion.

Nineteenth Embodiment

Next, a nineteenth embodiment of the invention will be described.

While the description has been given to the example in which the spaceris formed integrally with the IT-CCD substrate in the eighteenthembodiment, a silicon substrate 108 may be stuck onto the IT-CCDsubstrate through an adhesive layer 107 so as to be subjected topatterning on the IT-CCD substrate in this example. Other portions areformed in the same manner as those in the eighteenth embodiment.

More specifically, first of all, a channel stopper layer is formed, achannel region is formed and an element region such as an electriccharge transfer electrode . . . is formed on a silicon substrate 101 byusing an ordinary silicon process as shown in FIGS. 22A to 22C in thisexample. Moreover, there is formed a bonding pad BP which is providedwith a wiring layer on a surface and comprises a gold layer for anexternal connection.

As shown in FIG. 22A, then, a silicon substrate 103 is stuck onto theIT-CCD substrate through the adhesive layer 107.

As shown in FIG. 22B, thereafter, the silicon substrate 103 isselectively removed from the IT-CCD substrate by an etching method usingphotolithography to form a spacer 103S.

As shown in FIG. 22C, subsequently, an adhesive layer 109 is appliedonto the spacer 103S and a cut trench 104 is formed.

According to this method, the spacer is provided after the formation ofthe element region on the silicon substrate. Therefore, the spacer isnot an obstacle in the formation of the element region and manufacturecan easily be carried out. Since integral formation is not performed,there is also a problem in that a slight strain cannot be avoided.

The bonding and isolating steps are the same as those described in theembodiments.

Twentieth Embodiment

Next, a twentieth embodiment of the invention will be described.

While the description has been given to the example in which the siliconsubstrate 108 is stuck onto the IT-CCD substrate through the adhesivelayer 107 and is etched over the IT-CCD substrate to form the spacer103S in the nineteenth embodiment, a dummy substrate 601 may be used toform the spacer 103S thereon and may be stuck to a silicon substrate 101provided with an IT-CCD, that is, a substrate for the formation of theIT-CCD. Other portions are formed in the same manner as those in thenineteenth embodiment.

More specifically, as shown in FIG. 23A, a silicon substrate 103 to bethe spacer is stuck to the dummy plate 601 formed by a silicon substratethrough an adhesive layer 602 having a softening temperature ofapproximately 50 to 150 degree C. Then, the silicon substrate 103 isselectively removed by an etching method using photolithography, therebyforming the spacer 103S.

As shown in FIG. 23B, then, the silicon substrate 101 provided with theIT-CCD is stuck to the spacer 103S side through an adhesive layer 202having a softening temperature of approximately 100 to 200 degree C.

Thus, the silicon substrate 201 provided with the IT-CCD is stuck andheating is then carried out to approximately 50 to 150 degree C. tosoften the adhesive layer 602, thereby removing the dummy plate 601 asshown in FIG. 23C. As shown in FIG. 23D, subsequently, a cut trench 104is formed so that an IT-CCD substrate 100 having a spacer is formed inthe same manner as in FIG. 22B.

The bonding and isolating steps for the glass substrate and the IT-CCDsubstrate are the same as those described in the eighteenth embodiment.

According to such a method, it is not necessary to process the spacerover the IT-CCD substrate. Consequently, it is possible to prevent ascratch from being made on the IT-CCD substrate, thereby deteriorating ayield.

While the cut trench 104 is provided after the formation of the spacerin the embodiment, it is apparent that the cut trench 104 may beprovided before the formation of the spacer.

In the embodiments, the bonding of the glass substrate and the space andthe bonding of the silicon substrate constituting the IT-CCD and thespacer are carried out by using the adhesive layer. It is possible toobtain firm bonding by carrying out surface activation and performingthe bonding through cold direct bonding.

While the silicon substrate is used for the spacer in the first totwentieth embodiments (excluding the eleventh, twelfth and fifteenthembodiments), it is not restricted but a 42-alloy having a coefficientof thermal expansion which is almost equal to that of the IT-CCDsubstrate can also be applied. Furthermore, it is also possible to use amaterial having a coefficient of thermal expansion which is almost equalto that of a translucent substrate. In addition, a polyimide resin maybe used. In this case, a flexibility can be obtained and an effect ofabsorbing a strain can also be produced for the generation of the straindue to a change in a temperature.

Furthermore, the spacer may be formed by using an adhesive tape. In thiscase, it is possible to carry out a processing with high precision bycutting using a laser processing after sticking to a whole surface.

In addition, while the silicon substrate or the glass substrate is usedfor the dummy plate in the first to twentieth embodiments, it is notrestricted but a metal plate can also be used. Furthermore, a flexiblefilm may be used.

Moreover, it is also possible to apply a semi-curing resin, a UV curingresin, an UV/thermosetting combination type resin and a thermosettingresin for the adhesive layer.

In addition, it is possible to properly select a transfer method, screenprinting or a dispense method for a method of forming the adhesivelayer.

While the cut trench is provided prior to the formation of the spacer inthe eighteenth to twentieth embodiments, it is apparent that the cuttrench may be provided after the formation of the spacer.

Twenty-first Embodiment

Next, description will be given to a solid-state imaging devicecomprising a reinforcing plate according to a twenty-first embodiment ofthe invention.

As shown in FIG. 24, the solid-state imaging device is characterized inthat a reinforcing plate 701 formed by a silicon substrate bondedthrough a silicon oxide film (not shown) is stuck to the back side of asilicon substrate 101 constituting an IT-CCD substrate 100 of thesolid-state imaging device according to the first embodiment. Herein,the reinforcing plate 701 formed by the silicon substrate having thesilicon oxide film formed on a surface is bonded onto the IT-CCDsubstrate by direct bonding using surface activating cold bonding.

The structure of the element is the same as that of the solid-stateimaging device described in the first embodiment, and the siliconsubstrate is thinned to have an almost half thickness from the back faceby a CMP method and the reinforcing plate 701 is bonded to the back faceas shown in FIG. 24 in order to compensate for a reduction in a strengthwhich is caused by the thinning.

According to such a structure, the IT-CCD substrate 100 can be thinnedto increase a driving speed and a reduction in a strength which iscaused by the thinning can be compensated by the reinforcing plate.Moreover, a moisture resistance can also be enhanced.

Next, description will be given to a process for manufacturing thesolid-state imaging device.

A processing to be carried out till the step of sticking a glasssubstrate to the IT-CCD substrate is basically the same as that of thefirst embodiment. More specifically, as shown in FIG. 25A, an elementregion constituting the IT-CCD is formed by using an ordinary siliconprocess on the silicon substrate 101 provided with a cut trench 104 inadvance, and furthermore, there is formed a bonding pad BP which isprovided with a wiring layer on a surface and comprises a gold layer foran external connection.

As shown in FIG. 25B, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and a sealing cover glass 200 is mounted on the IT-CCD substrate 100provided with an element region as described above and heating iscarried out to integrate both of them with an adhesive layer 202. Thisprocess may employ surface activating cold bonding.

As shown in FIG. 25C, thereafter, the glass substrate is maintained asit is and the CMP method is carried out from the back side of thesilicon substrate 101 in the same manner to polish the cut trench 104portion. Thus, isolation into individual solid-state imaging devices canbe carried out.

As shown in FIG. 25D, furthermore, the reinforcing plate 701 formed by asilicon substrate having a silicon oxide film (not shown) provided on asurface is bonded to the back side of the thinned silicon substrate 101by direct bonding using the surface activating cold bonding

Finally, the back side of a glass substrate 201 is removed to reach thetrench section 204, and the glass substrate is thinned and isindividually isolated at the same time. In the end, the reinforcingplate 701 is subjected to dicing by using a diamond blade (agrindstone), thereby forming a solid-state imaging device having areinforcing plate as shown in FIG. 25E.

Thus, the solid-state imaging device can be formed very easily.

According to the method of the invention, consequently, collectivemounting is carried out and individual isolation is then performedwithout the execution of an individual alignment and an electricalconnection such as wire bonding. Therefore, manufacture can easily becarried out and handling can also be performed readily. Moreover, thesilicon substrate is first thinned and isolated and the reinforcingplate is stuck and is then subjected to the dicing. Consequently, a highreliability can be obtained.

While the spacer is formed on the glass substrate in the embodiment, itis also possible to apply a spacer which is provided on the IT-CCDsubstrate or is provided separately.

While the reinforcing plate is constituted by the silicon substrateisolated from the IT-CCD substrate and is caused to have an adiabaticproperty in the embodiment, moreover, it is also possible to utilize asubstrate having an excellent heat conductiveness for a radiation plate.According to the embodiment, furthermore, a moisture resistance can alsobe enhanced. In addition, also in the case in which the cut trench 104is not provided, the embodiment can be applied.

Twenty-second Embodiment

As a twenty-second embodiment of the invention, moreover, it is alsopossible to obtain a shield plate 801 by sticking a metal substrate suchas tungsten or chromium in place of the reinforcing plate as shown inFIG. 26. Other portions are constituted in just the same manner.

According to such a structure, an electromagnetic wave can be shieldedso that an unnecessary radiation noise can be reduced.

Twenty-third Embodiment

Next, a twenty-third embodiment of the invention will be described.

In the first to twenty-second embodiments, the bonding pad formed on thesurface of the IT-CCD substrate is formed to be exposed and the edge ofthe translucent substrate (glass substrate) 201 is formed to be placedon the inside of the edge of the IT-CCD substrate in such a manner thatan electrical connection can be carried out over the surface of theIT-CCD substrate. This example is characterized in that the edges of anIT-CCD substrate and a glass substrate are constituted equally and theback side is fetched via a through hole H penetrating through an IT-CCDsubstrate 100 and a reinforcing plate 701 stuck to a back face thereofas shown in FIG. 27C. 108 denotes a conductor layer and 109 denotes asilicon oxide layer to be an insulating layer. More specifically, aglass substrate 201 to be a translucent member is bonded to the surfaceof the IT-CCD substrate 100 comprising a silicon substrate 101 to be asemiconductor substrate provided with an IT-CCD 102 through a spacerS203 in order to have a gap C corresponding to the light receivingregion of the silicon substrate 101, and furthermore, a pad 113 and abump 114 are formed to be external fetch terminals which are formed onthe back side of the IT-CCD substrate 100 via the through hole H formedon the silicon substrate 101, and the edge is individually isolated bydicing and an external connection is carried out through the bump 114.As shown in FIG. 28D, a connection to a peripheral circuit board 901 iscarried out through an anisotropic conductive film 115. In addition,diffusion bonding using an ultrasonic wave, solder bonding and eutecticbonding by thermocompression are effective. Furthermore, a clearance maybe underfilled with a resin. The spacer 203S has a height of 30 to 150μm, and preferably 80 to 120 μm. Other portions are formed in the samemanner as those in the first embodiment.

A process for manufacturing the solid-state imaging device is shown inFIGS. 27A to 27C and FIGS. 28A to 28D.

More specifically, in this method, the reinforcing plate 701 formed by asilicon substrate provided with a silicon oxide film (not shown) isbonded, through surface activating cold bonding, to the back face of theIT-CCD substrate 100 provided with an element region for the formationof an IT-CCD and a bonding pad BP for an external connection by using anordinary silicon process in the same manner as in the steps shown inFIGS. 6A and 6B in the fourth embodiment (FIG. 27A).

As shown in FIG. 27B, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and a cover glass 200 having the spacer 203S bonded to the plate-shapedglass substrate 201 is mounted on the IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207.

A through hole is formed on the back side of the reinforcing plate 701by an etching method using photolithography. Then, a silicon oxide film109 is formed in the through hole by a CVD method. Thereafter,anisotropic etching such as RIE or ICP dry etching is carried out tocause the silicon oxide film 109 to remain on only the side wall of thethrough hole and the bonding pad BP is exposed as shown in FIG. 27C.

As shown in FIG. 28A, subsequently, a tungsten film is formed as theconductor layer 108 to come in contact with the bonding pad in thethrough hole by a CVD method using WF₆.

As shown in FIG. 28B, then, the bonding pad 113 and the bump 114 areformed on the surface of the reinforcing plate 701.

Thus, it is possible to form a signal fetch electrode terminal and aconducting electrode terminal on the reinforcing plate 701 side.

As shown in FIG. 28C, thereafter, an anisotropic conductive film 115(ACP) is applied onto the surface of the reinforcing plate 701.

As shown in FIG. 28D, finally, the circuit board 901 provided with adriving circuit is connected through the anisotropic conductive film115. The circuit board 901 is provided with a contact layer 117 formedby a conductor layer filled in the through hole to penetrate through theboard and a bonding pad 118.

Accordingly, it is possible to easily achieve a connection to a circuitboard such as a printed board through the bonding pad 118. Moreover, thecontact layer 117 is formed in alignment with the conductor layer 108formed on the IT-CCD substrate.

Then, the whole device is subjected to dicing along a dicing line DC anddivision into individual solid-state imaging devices is carried out(only one unit is shown in the drawing and a plurality of IT-CCDs arecontinuously formed on one wafer).

Thus, the solid-state imaging device can be formed very easily with ahigh workability.

The reinforcing plate 701 is constituted by the silicon substrateprovided with the silicon oxide film. Therefore, it is possible to carryout heat insulation or electrical insulation from the IT-CCD substrate100.

While the conductor layer is formed in the through hole by the CVDmethod in the embodiment, moreover, it is possible to easily fill theconductive layer in the contact hole having a high aspect ratio with ahigh workability by using a plating method, a vacuum screen printingmethod or a vacuum sucking method.

While the electrical connection of the surface and back of the IT-CCDsubstrate and the circuit board mounting the peripheral circuit iscarried out by using the through hole in the embodiments, furthermore,it is not restricted but a method of forming a contact to electricallyconnect the surface and the back by impurity diffusion from the surfaceand the back face can also be employed.

Thus, it is possible to form the signal fetch electrode terminal and theconducting electrode terminal on the reinforcing plate 701 side.

Twenty-fourth Embodiment

Next, a twenty-fourth embodiment of the invention will be described.

While the through hole is formed to penetrate through the reinforcingplate 701 and the conductor layer 111 is formed in the twenty-thirdembodiment, an IT-CCD substrate is formed by using a silicon substrateprovided with a hole (a vertical hole) in advance in the embodiment.Since a small formation depth for the vertical hole is enough,consequently, a productivity can be enhanced and a manufacturing yieldcan be improved. Other portions are formed in the same manner as thoseof the twenty-third embodiment.

More specifically, as shown in FIG. 29A, a resist pattern is firstformed on the back face of the silicon substrate by photolithographyprior to the formation of an IT-CCD, and a vertical hole 118 is formedby RIE (reactive ion etching) by using the resist pattern as a mask. Atthis step, a pad 110 formed of aluminum is provided on a surface and thevertical hole 118 is formed to reach the pad 110.

As shown in FIG. 29B, then, a silicon oxide film 119 is formed on theinternal wall of the vertical hole 118 by a CVD method.

As shown in FIG. 29C, an element region for forming the IT-CCD isprovided by using the same ordinary silicon process as that of each ofthe embodiments.

As shown in FIG. 29D, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and a cover glass 200 having a spacer 203S bonded to a plate-shapedglass substrate 201 is mounted on an IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207. Similarly, surface activating cold bondingmay be used at the bonding step.

As shown in FIG. 29E, thereafter, the reinforcing plate 701 is bonded tothe back side of the IT-CCD substrate 100 through the surface activatingcold bonding and a through hole 108 is formed to reach the vertical hole118 from the back side by an etching method using photolithography.Similarly, it is desirable that the internal wall of the through holeshould be insulated. Moreover, it is also possible to use a reinforcingplate provided with a through hole in advance.

Subsequently, the steps shown in FIGS. 28A to 28D described in thetwenty-third embodiment are executed. Consequently, it is possible toeasily form a solid-state imaging device having such a structure that acircuit board provided with a peripheral circuit is laminated.

In the embodiment, as described above, a productivity can be enhancedbecause of the small formation depth of the vertical hole and amanufacturing yield can be improved.

Twenty-fifth Embodiment

Next, a twenty-fifth embodiment of the invention will be described.

In the twenty-fourth embodiment, the contact is formed to penetratethrough the reinforcing plate 701, the IT-CCD substrate and the circuitboard and an electrode is fetched from the circuit board side. Theembodiment is characterized in that a conductor layer 120 to be a wiringlayer is formed on a side wall and an electrode is fetched from the sidewall of the solid-state imaging device as shown in FIGS. 30A and 30B.Other portions are formed in the same manner as those of thetwenty-fourth embodiment.

A manufacturing process is almost the same as that of the twenty-fourthembodiment. The position of a through hole is caused to correspond toeach of the ends of the solid-state imaging devices and dicing iscarried out by using a cutting line DC including the through hole.Consequently, it is possible to easily form a solid-state imaging devicehaving a wiring layer formed on a side wall.

Moreover, the conductor layer 120 to be filled in the through hole isconstituted by a shielding material such as tungsten. Consequently,although the solid-state imaging device is not completely shielded, amalfunction can be reduced.

When the reinforcing plate is constituted by a polyimide resin, ceramic,a crystallized glass or a silicon substrate having a surface and a backface oxidized if necessary, it can function as an adiabatic substrate.Moreover, the reinforcing plate may be formed by a shielding material.

Twenty-sixth Embodiment

Next, a twenty-sixth embodiment of the invention will be described.

While the back side of the IT-CCD substrate 100 is provided on theperipheral circuit board through the reinforcing plate as shown in FIG.28 in the twenty-third and twenty-fourth embodiments, the IT-CCDsubstrate 100 is provided on a peripheral circuit board 901 and areinforcing plate 701 is sequentially provided on the back side of theperipheral circuit board 901 as shown in FIG. 31 in this example. Otherportions are formed in the same manner as those of the twenty-fourth ortwenty-fifth embodiment.

The reinforcing plate also serves as a radiation plate.

While a manufacturing process is almost the same as that of each of thetwenty-third and twenty-fourth embodiments, the IT-CCD substrate 100 andthe peripheral circuit board 901 are provided close to each other.Correspondingly, a connecting resistance can be reduced and high-speeddriving can be carried out.

Twenty-seventh Embodiment

Next, a twenty-seventh embodiment of the invention will be described.

While the through hole is formed in the substrate and the electrode isfetched from the back side of the peripheral circuit board in thetwenty-sixth embodiment, this example is characterized in that aconductor layer 120 to be a wiring layer is formed on a side wallthrough an insulating film 121 as shown in FIG. 32. Other portions areformed in the same manner as those of the twenty-sixth embodiment.

Manufacture is almost the same as that of the twenty-fifth embodiment.By only setting a dicing line into a position including a contact formedon a through hole, it is possible to easily form a solid-state imagingdevice having a side wall wiring.

In the solid-state imaging device, the wiring is formed on the sidewall. Therefore, it is possible to form a signal fetch terminal and acurrent supply terminal on the side wall. It is apparent that a pad anda bump on the back side of a peripheral circuit board 901 may be formedto carry out a connection. 701 denotes a reinforcing plate.

In the twenty-first to twenty-seventh embodiments, a sealing cover glass200 can be formed in the same manufacturing method as that of each ofthe first to twentieth embodiments.

Twenty-eighth Embodiment

Next, a twenty-eighth embodiment of the invention will be described.

In the twenty-third embodiment, the through hole is formed in thesubstrate and the electrode is fetched on the back side of theperipheral circuit board. This example is characterized in that aconductor layer 209 is formed in a through hole 208 provided through aglass substrate 201 and a spacer 203S and a pad 210 is formed on theupper surface of the glass substrate 201, and a signal fetch terminaland a current supply terminal are formed thereon. Other portions areformed in the same manner as those in the twenty-third embodiment shownin FIGS. 27 and 28.

Next, a process for manufacturing a solid-state imaging device is shownin FIGS. 34A, 34A′, and 34B to 34F and FIGS. 35A to 35E.

More specifically, in the twenty-third embodiment, the through hole isformed on the IT-CCD substrate 100 and the signal fetch terminal and thecurrent supply terminal are formed on the back side of the IT-CCDsubstrate 100 at the step shown in FIG. 27C. On the other hand, thismethod is characterized in that the spacer 203S is stuck to the glasssubstrate 201 constituting a sealing cover glass 200 and the throughhole 208 is formed to penetrate through the spacer 203S and the glasssubstrate 201 in that state, and the conductor layer is formed thereinand the signal fetch terminal and the current supply terminal are formedon the surface side of the sealing cover glass 200.

First of all, as shown in FIG. 34A, a silicon substrate 203 having athickness of 30 to 120 μm for forming the spacer is prepared.

As shown in FIG. 34A′, next, the glass substrate 201 for constitutingthe sealing cover glass 200 is prepared.

As shown in FIG. 34B, then, an adhesive layer 202 is applied onto thesurface of the substrate 203.

As shown in FIG. 34C, thereafter, the silicon substrate 203 having theadhesive layer 202 applied thereto is stuck to the surface of the glasssubstrate 201.

As shown in FIG. 34D, subsequently, a resist pattern is formed byphotolithography and RIE (reactive ion etching) is carried out by usingthe resist pattern as a mask, and an adhesive is previously applied toremove a concave portion 205 including a region corresponding to aphotodiode, that is, a region corresponding to a light receiving region(40 in FIG. 1B) or a removal processing is carried out by an oxygenplasma after the RIE.

As shown in FIG. 34E, then, a resist pattern is formed by thephotolithography and the RIE (reactive ion etching) is carried out byusing the resist pattern as a mask. Consequently, the through hole 208is formed to penetrate through the spacer 203S and the glass substrate201.

Thereafter, a silicon oxide film (not shown) is provided on at least theinternal wall of the spacer formed of silicon by CVD if necessary.

In the case in which the spacer is formed by an insulator such as aglass or a resin, this step is not required. Moreover, a shielding filmmay be formed on the internal or external wall of the spacer.

As shown in FIG. 35A, thereafter, the conductor layer 209 is formed onthe internal wall of the through hole which is insulated by vacuumscreen printing or metal plating using a conductive paste such as asilver paste or a copper paste, and a through contact region penetratingthrough the spacer 203S and the glass substrate 201 is formed.

As shown in FIG. 35B, subsequently, gold bonding pads 210 and 211 or abump 212 are/is formed on the surface and back face of the glasssubstrate having the spacer so as to be connected to the through contactregion. In the film formation, a thin gold film is formed on the surfaceand the back face and patterning is carried out by an etching methodusing photolithography, or screen printing or selective plating can beapplied.

Furthermore, an anisotropic conductive resin film 213 is applied asshown in FIG. 35C.

On the other hand, as shown in FIG. 35D, the IT-CCD substrate 100provided with a reinforcing plate 701 is prepared in the same manner asin the twenty-third embodiment.

As shown in FIG. 35E, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the cover glass 200 having the spacer 203S bonded to theplate-shaped glass substrate 201 is mounted on the IT-CCD substrate 100formed as described above and is thus heated so that both of them areintegrated with the anisotropic conductive film 213.

Then, the whole device is subjected to dicing along a dicing line DC anddivision into individual solid-state imaging devices is carried out.

Thus, the solid-state imaging device provided with a contact region suchas a bonding pad on a sealing cover glass can be formed very easily witha high workability.

Twenty-ninth Embodiment

Next, a twenty-ninth embodiment of the invention will be described.

While the description has been given to the solid-state imaging devicein which the through hole penetrating through the glass substrate andthe spacer is formed and the contact region such as a bonding pad isformed on the sealing cover glass in the twenty-eighth embodiment, avariant will be described in the following thirtieth to thirty-thirdembodiments.

First of all, the embodiment is characterized by the formation of athrough hole on a spacer, and a glass substrate 201 is prepared as shownin FIG. 36A.

As shown in FIG. 36B, a photosetting resin is formed on the surface ofthe glass substrate 201 by a photoshielding method so that a spacer 213is formed.

As shown in FIG. 36C, then, a through hole 208 is formed by an etchingmethod using photolithography.

Thus, it is possible to easily obtain a sealing cover glass which hasthe spacer and is provided with the through hole.

Subsequently, the mounting steps shown in FIGS. 35A to 35E are executedin the same manner as described in the twenty-eighth embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 35E can beobtained.

According to such a method, the spacer can easily be formed. While thephotosetting resin is used in the embodiment, an adhesive itself may beused. The glass substrate and the spacer are formed integrally and awarpage and a strain can be reduced, and furthermore, manufacture canalso be carried out easily.

Thirtieth Embodiment

Next, a thirtieth embodiment of the invention will be described.

While the silicon substrate for forming the spacer is stuck to the glasssubstrate and is subjected to the patterning in the twenty-eighthembodiment, a glass substrate may be etched at a one-time etching stepto form a concave portion and a through hole at the same time in theembodiment. Other portions are formed in the same manner as those of thetwenty-eighth embodiment.

In the embodiment, first of all, a glass substrate 201 is prepared asshown in FIG. 37A.

As shown in FIG. 37B, then, a resist pattern R is formed on the surfaceand back face of the glass substrate 201, an opening is provided on bothof the surface and back face in a region in which a through hole is tobe formed and an opening is provided on only the back side in a regionin which a concave portion 205 (and a cut trench 204 if necessary)is/are to be formed.

As shown in FIG. 37C, thereafter, the glass substrate is etched fromboth surfaces by using, as masks, the resist patterns on the surface andback face so that the concave portion 205, a cut trench (not shown) anda through hole 208 are formed at the same time.

Thus, it is possible to easily obtain a sealing cover glass having aspacer formed integrally therewith and a through hole formed therein.

Subsequently, the mounting steps shown in FIGS. 35A to 35E are executedin the same manner as described in the twenty-eighth embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 35E can beobtained.

The glass substrate and the spacer are formed integrally and a warpageand a strain can be reduced, and furthermore, manufacture can also becarried out easily.

Thirty-first Embodiment

Next, a thirty-first embodiment of the invention will be described.

While the silicon substrate for forming a spacer is stuck to the glasssubstrate and is subjected to the patterning in the twenty-eighthembodiment, a spacer 203S having a pattern formed thereon is stuck to aglass substrate 201 and a through hole is finally formed at an etchingstep in the embodiment. Other portions are formed in the same manner asthose of the twenty-eighth embodiment.

First of all, in the embodiment, the glass substrate 201 is prepared asshown in FIG. 38A.

On the other hand, a silicon substrate 203 for forming a spacer isprepared as shown in FIG. 38A′.

As shown in FIG. 38B, then, the silicon substrate 203 is processed by anetching method using photolithography so that the spacer 203S isobtained.

As shown in FIG. 38C, thereafter, an adhesive 202 is applied onto thesurface of the spacer 203S subjected to the patterning.

As shown in FIG. 38D, subsequently, the spacer 203S is stuck inalignment with the glass substrate 201.

As shown in FIG. 38E, then, a through hole 208 is formed by the etchingmethod using the photolithography.

Thus, it is possible to easily obtain a sealing cover glass which hasthe spacer stuck thereto and the through hole formed thereon.

Thereafter, a silicon oxide film (not shown) is provided on at least theinternal wall of the spacer formed of silicon by CVD if necessary.

In the case in which the spacer is formed by an insulator such as aglass or a resin, this step is not required. Moreover, a shielding filmmay be formed on the internal or external wall of the spacer.

Subsequently, the mounting steps shown in FIGS. 35A to 35E are executedin the same manner as described in the twenty-eighth embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 35E can beobtained.

It is also possible to stick the glass substrate to the spacer by usingan ultraviolet curing resin, a thermosetting resin or both of them orapplying a semicuring adhesive. In the formation of the adhesive,moreover, it is possible to properly select supply using a dispenser,screen printing or stamp transfer.

As shown in FIG. 38C, moreover, it is also possible to form a shieldingfilm 215 by a method of sputtering a tungsten film into the inside wallof the concave portion of the spacer.

Consequently, it is possible to obtain an excellent image pick-upcharacteristic without separately providing the shielding film.

Thirty-second Embodiment

Next, a thirty-second embodiment of the invention will be described.

In the twenty-eighth embodiment, the description has been given to theexample in which the silicon substrate for forming a spacer is stuck tothe glass substrate and is patterned, and the through hole to penetratethrough the glass substrate and the spacer is finally formed by etching.In the embodiment, as shown in FIGS. 39A to 39F, a shape processing iscarried out by etching a silicon substrate, and a spacer 203S formed upto a through hole 208 a shown in FIG. 39E and a glass substrate 201provided with a through hole 208 b shown in FIG. 39B′ are aligned byusing an alignment mark on a wafer level and both of them are stucktogether with an adhesive layer 202. Other portions are formed in thesame manner as those in the twenty-eighth embodiment.

Also in this case, it is also possible to form a shielding film (215) onan inside wall facing the concave portion of the spacer.

According to such a method, since the through holes are individuallyformed to carry out the sticking, the alignment is required and analmost half aspect ratio is enough. Consequently, the through hole caneasily be formed.

Subsequently, the mounting steps shown in FIGS. 35A to 35E are executedin the same manner as described in the twenty-eighth embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 35E can beobtained.

Thirty-third Embodiment

Next, a thirty-third embodiment of the invention will be described.

In the twenty-eighth embodiment, the silicon substrate for forming aspacer is stuck to the glass substrate and the conductor layer 209 isformed in the through hole penetrating through the glass substrate andthe spacer at the etching step and the IT-CCD substrate 100 is thenstuck thereto. The embodiment is characterized in that a glass substrate200 having a spacer which is provided with a through hole 208 in thetwenty-eighth to thirty-second embodiments is aligned with the IT-CCDsubstrate 100 having a reinforcing plate 701 stuck to a back face on awafer level and they are stuck together, and the conductor layer 209 isthen formed in the through hole 208 as shown in FIGS. 40A to 40D.Moreover, a bonding pad 210 is formed to be connected to the conductorlayer 209. Other portions are formed in the same manner as those in thetwenty-eighth embodiment.

When the conductor layer 209 is to be filled, similarly, it is possibleto easily carry out the formation by vacuum screen printing using aconductive paste such as a copper paste or metal plating.

Thirty-fourth Embodiment

Next, a thirty-fourth embodiment of the invention will be described.

While the sealing cover glass formed of a plate-shaped member is usedfor the translucent member in the first to thirty-third embodiments, thesealing cover glass itself is caused to have an image forming functionto constitute an optical member so that a size can be more reduced.

As shown in FIG. 41, a solid-state imaging device is characterized inthat a sealing cover glass 220 having a lens array is used in place ofthe sealing cover glass 200 according to the twenty-eighth tothirty-third embodiments.

The sealing cover glass 220 is formed by a shielding method or anetching method.

Moreover, other portions are formed in almost the same manner as thosein the twenty-eighth embodiment.

In the twenty-eighth embodiment, as shown in FIG. 33, the conductorlayer 209 is formed in the through hole 208 provided in the glasssubstrate 201 and the spacer 203S, and furthermore, the pad 210 isformed on the upper surface of the glass substrate 201 and the signalfetch terminal and the current supply terminal are formed thereon. Thisexample is characterized in that a bonding pad BP is connected to anexternal connecting terminal in a partial region which is not shown anda signal fetch terminal and a current supply terminal are constituted.Other portions are formed in the same manner as those in thetwenty-eighth embodiment shown in FIGS. 33 and 34.

Next, a process for manufacturing the solid-state imaging device isshown in FIGS. 42A to 42D and FIGS. 43A to 43C.

More specifically, the manufacturing process is also varied greatly inthat the sealing cover glass 220 having a lens array is used in place ofthe sealing cover glass 200 according to the twenty-eighth tothirty-third embodiments.

Moreover, while the spacer 203S is stuck to the glass substrate 201constituting the sealing cover glass 200, and the through hole 208 isformed to penetrate through the spacer 203S and the glass substrate 201in that state and the conductor layer is formed therein, and the signalfetch terminal and the current supply terminal are formed on the surfaceside of the sealing cover glass in the thirty-third embodiment, theformation may be carried out in the same manner in this example.

An adhesive layer 207 is formed on the surface of the spacer 203S of thesealing cover glass 220 having a lens array which is provided at stepsshown in FIGS. 42A to 42D (which is shown in FIG. 43A).

On the other hand, an IT-CCD substrate 100 provided with a reinforcingplate 701 is prepared as shown in FIG. 43B in the same manner as thatused in the twenty-eighth embodiment.

As shown in FIG. 43C, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the cover glass 220 having a lens array to which the spacer 203S isstuck is mounted on the IT-CCD substrate 100 formed as described aboveand is thus heated so that both of them are integrated with the adhesivelayer 207.

Moreover, a variant of a process for manufacturing the sealing coverglass 220 having a spacer will be described in thirty-fifth tothirty-eighth embodiments.

Thirty-fifth Embodiment

Next, a thirty-fifth embodiment of the invention will be described.

As shown in FIGS. 44A and 44B, the embodiment is characterized in that asealing cover glass 220 having a lens array is prepared and a concaveportion 225 is formed on the back side thereof by etching, and a spacer223S is formed integrally. Other portions are formed in the same manneras those in the embodiments.

According to such a structure, the formation can easily be carried outwith a high workability, and furthermore, it is possible to obtain thesealing cover glass 220 having a lens array in which a strain is notgenerated because of the integral formation and a reliability isenhanced.

Thirty-sixth Embodiment

Next, a thirty-sixth embodiment of the invention will be described.

In the embodiment, first of all, a glass substrate 220 having a lensarray is prepared as shown in FIG. 45A.

As shown in FIG. 45B, then, a photocuring resin is formed on the surfaceof the glass substrate 220 having a lens array by a photoshieldingmethod and a spacer 223S is formed.

Thus, it is possible to easily obtain a sealing cover glass which hasthe spacer and is provided with a through hole.

Subsequently, the mounting steps shown in FIGS. 43A to 43C are executedin the same manner as described in the thirty-fourth embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 43C can beobtained.

Thirty-seventh Embodiment

Next, a thirty-seventh embodiment of the invention will be described.

In the thirty-fourth embodiment, as shown in FIGS. 46A to 46D, a spacer203S formed by an etching method may be stuck to a sealing cover glass220 having a lens array. At the mounting step, sticking to an IT-CCDsubstrate is carried out to perform dicing in the same manner as in thethirty-sixth embodiment. Consequently, a solid-state imaging device canbe obtained.

Thirty-eighth Embodiment

Next, a thirty-eighth embodiment of the invention will be described.

As shown in FIG. 47, moreover, a sealing cover glass 220 having a lensarray, a spacer 203S and an IT-CCD substrate 100 having a reinforcingplate 701 may be fixed at the same time.

Thirty-ninth Embodiment

Next, a thirty-ninth embodiment of the invention will be described.

As shown in FIGS. 48A to 48D, moreover, a sealing cover glass 220 havinga lens array can also be applied to the solid-state imaging device inwhich the peripheral circuit board 901 is provided through theanisotropic conductive film 115 shown in FIGS. 28A to 28D in thetwenty-third embodiment. Other portions are formed in the same manner asthose in the embodiments.

Also in the connection of the peripheral circuit board 901, furthermore,diffusion bonding using an ultrasonic wave, solder bonding and eutecticbonding by thermocompression are also effective. In addition,underfilling using a resin may be carried out.

The sealing cover glass 220 having a lens array may be used in place ofthe sealing cover glass 200 formed by a plate-shaped member.

Fortieth Embodiment

Next, a fortieth embodiment of the invention will be described.

As shown in FIG. 49, moreover, the IT-CCD substrate 100, the peripheralcircuit board 901 and the reinforcing plate 701 may be provided in thisorder as shown in FIG. 31 in the twenty-sixth embodiment. Other portionsare formed in the same manner as those in the embodiments.

Forty-first Embodiment

Next, a forty-first embodiment of the invention will be described.

As shown in FIG. 50, moreover, it is also effective that a wiring 221 isformed on the side wall of a spacer.

Manufacture is carried out in the same manner as that in thetwenty-seventh embodiment and it is possible to easily form the wiringon the side wall by providing a through hole in the spacer, forming aconductor layer in the through hole, sticking an IT-CCD substrate to asealing cover glass 220 having a lens and then carrying out divisionalong a dicing line including the through hole. Other portions areformed in the same manner as those in the embodiments.

While the description has been given to the method of carrying out, withan adhesive layer or with an anodic bonding, the bonding of a glasssubstrate constituting a sealing cover glass to a spacer and the bondingof an IT-CCD substrate to the sealing cover glass or the methodemploying the anode bonding or the surface activating cold bonding inthe embodiments, it is also possible to properly carry out the bondingthrough the surface activating cold bonding without using an adhesive inthe case in which the spacer and the surface of the IT-CCD substrate isformed of Si or metal in all of the embodiments. If the pyrex is used asthe cover glass and Si is used as the spacer, it is possible to bondwith anodic bonding. In the case in which an adhesive layer is used, itis also possible to utilize a thermosetting adhesive and a thermosettingcombination UV curing adhesive in addition to a UV curing adhesive forthe adhesive layer.

In case that the semi-curing adhesive is applied for bonding, coatingwith the adhesive is performed in liquid state. And then, alignment isperformed with semi-curing the adhesive. Therefore, it is possible toadjust positions when alignment is performed. Accordingly, it ispossible to form a solid-state imaging device with sophisticatedpositioning.

Moreover, it is possible to properly select, as a spacer, a 42-alloy,metal, a glass, photosensitive polyimide and a polycarbonate resin inaddition to a silicon substrate in all of the embodiments, which hasalso been described in the first embodiment.

When the IT-CCD substrate is to be bonded to the sealing cover glass byusing the adhesive layer, furthermore, it is preferable that the moltenadhesive layer should be prevented from flowing out, for example, aliquid reservoir should be formed. Referring to the bonded portion ofthe spacer and the IT-CCD substrate or the sealing cover glass,similarly, it is preferable that the molten adhesive layer should beprevented from flowing out, for example, a concave or convex portionshould be provided in a bonded portion to form a liquid reservoir asshown in an example of the shape of the bonded end of a spacer in FIGS.51A to 51F.

Moreover, as shown in FIG. 52, in order to reinforce the bonding betweenthe IT-CCD substrate and the cover glass for shielding and preventdeterioration of the IT-CCD substrate, resin for shielding is applicablefor shielding the bonding link between the glass substrate 2002including cover glass 201 for shielding and the spacer 203 s, and resinM for shielding is applicable for shielding the bonding link between thespacer and the IT-CCD substrate 100. Accordingly, it is possible toprevent the water from permeating into the bonding links and to obtain areliable IT-CCD.

As a resin for shielding, epoxy, oxetany, silicony, acrylic, or suchmaterials are properly. It is possible to apply for resin shielding anyresins which can form a predetermined area for shielding, prevent thewater from permeating into the bonding links, and obtain a reliableIT-CCD.

For forming the above mentioned IT-CCD, the resin for shielding issupplied to an area expecting the bonding pat BP (electrode pad) byusing a dispenser and JIG for masking. And then, after curing the resin,the JIG masking the bonding pad is removed. Thereby, it is possible toprocess for resin shielding without coating the bonding pad. During thisprocess, it is preferable to employ resins which is curable under 80degree C. as well as the adhesives afore-mentioned as resins forshielding. As resins, it is preferable to use photo-curing resin orthermal-curing resin. If the photo-curing resin is applied forshielding, it is preferable to use a light transmittable member as JIG.

While the CMP is carried out up to the position of the cut trench inorder to isolate the substrate provided with the cut trench into theindividual elements in the embodiments, it is also possible to usegrinding, polishing or overall etching.

In the case in which the reinforcing plate (701) is used in theembodiments, moreover, it can serve as an adiabatic substrate if apolyimide resin, ceramic, a crystallized glass, or a silicon substratehaving a surface and back oxidized is used as a material if necessary.Furthermore, a shielding material may be used.

In the case in which it is necessary to stick the glass substrate to thespacer in the embodiments, moreover, the sticking may be executed byusing an ultraviolet curing resin, a thermosetting resin or both of themor by applying a semi-curing adhesive. In the formation of the adhesive,furthermore, it is possible to properly select supply using a disperser,screen printing or stamp transfer.

In addition, the examples described in the embodiments can be modifiedmutually within an applicable range over whole configurations.

Forty-second Embodiment

As shown in a sectional view of FIG. 53A and an enlarged sectional viewillustrating a main part in FIG. 53B, a solid-state imaging device ischaracterized in that a glass substrate 201 to be a translucent memberis bonded to the surface of an IT-CCD substrate 100 comprising a siliconsubstrate 101 to be a semiconductor substrate provided with an IT-CCD102 through a spacer 203S in order to have a gap C corresponding to thelight receiving region of the silicon substrate 101, and furthermore, aconductor layer 209 is formed in a through hole 208 provided in theglass substrate 201 and the spacer 203S and a pad 210 is formed on theupper surface of the glass substrate 201 in order to carry out aconnection to a bonding pad BP of the silicon substrate 101, and asignal fetch terminal and a current supply terminal are formed thereon.The spacer 203S has a height of 10 to 500 μm, and preferably 80 to 120μm.

The structure of the IT-CCD substrate is almost same to the structure ofthe first embodiment.

In this embodiment, the upper layer of the filter layer 46 is coveredwith a microlens array comprising a microlens 50 formed by patterning atranslucent resin containing a photosensitive resin having a refractiveindex of 1.3 to 2.0 by photolithography through a flattened insulatingfilm 48 and then fusing the same translucent resin, and rounding thefused translucent resin by a surface tension and thereafter cooling therounded translucent resin.

Next, description will be given to a process for manufacturing thesolid-state imaging device. This method is based on a so-called waferlevel CSP method in which positioning is carried out on a wafer level,collective mounting and integration are performed and isolation for eachIT-CCD is then executed as shown in views illustrating the manufacturingprocess in FIGS. 54A to E and FIGS. 55A to E (only one unit is shown inthe drawing and a plurality of IT-CCDs are continuously formed on onewafer). This method is characterized by the use of a sealing cover glass200 having a spacer which is provided with a spacer 203S in advance anda through hole penetrating through the glass substrate and the spacer.

More specifically, this method is characterized in that the spacer 203Sis stuck to the glass substrate 201 constituting the sealing cover glass200 and the through hole 208 is formed to penetrate through the spacer203S and the glass substrate 201 in that state, and the conductor layer209 is formed therein and the signal fetch terminal and the currentsupply terminal are formed on the surface side of the sealing coverglass 200.

First of all, as shown in FIG. 54A, a silicon substrate 203 having athickness of 10 to 500 μm for forming the spacer is prepared.

As shown in FIG. 54A′, next, the glass substrate 201 for constitutingthe sealing cover glass 200 is prepared.

As shown in FIG. 54B, then, an adhesive layer 202 is applied onto thesurface of the substrate 203.

As shown in FIG. 54C, thereafter, the silicon substrate 203 having theadhesive layer 202 applied thereto is stuck to the surface of the glasssubstrate 201.

As shown in FIG. 54D, subsequently, a resist pattern is formed byphotolithography and RIE (reactive ion etching) is carried out by usingthe resist pattern as a mask, and an adhesive is previously applied toremove a concave portion 205 including a region corresponding to aphotodiode, that is, a region corresponding to a light receiving region(40 in FIG. 53B) or a removal processing is carried out by an oxygenplasma after the RIE.

As shown in FIG. 54E, then, a resist pattern is formed by thephotolithography and the RIE (reactive ion etching) is carried out byusing the resist pattern as a mask. Consequently, the through hole 208is formed to penetrate through the spacer 203S and the glass substrate201.

Thereafter, a silicon oxide film (not shown) is formed on at least theinternal wall of the spacer formed of silicon by CVD if necessary.

In the case in which the spacer is formed by an insulator such as aglass or a resin, this step is not required. Moreover, a shielding filmmay be formed on the internal or external wall of the spacer.

As shown in FIG. 55A, thereafter, the conductor layer 209 is formed onthe internal wall of the through hole which is insulated by vacuumscreen printing or metal plating using a conductive paste such as asilver paste or a copper paste, and a through contact region penetratingthrough the spacer 203S and the glass substrate 201 is formed.

As shown in FIG. 55B, subsequently, gold bonding pads 210 and 211 or abump 212 are/is formed on the surface and back face of the glasssubstrate having the spacer so as to be connected to the through contactregion. In the film formation, a thin gold film is formed on the surfaceand the back face and patterning is carried out by an etching methodusing photolithography, or screen printing or selective plating can beapplied.

Furthermore, an anisotropic conductive resin film 213 is applied asshown in FIG. 55C.

On the other hand, as shown in FIG. 55D, the IT-CCD substrate 100provided with a reinforcing plate 701 is prepared

As shown in FIG. 55E, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the cover glass 200 having the spacer 203S bonded to theplate-shaped glass substrate 201 is mounted on the IT-CCD substrate 100formed as described above and is thus heated so that both of them areintegrated with the anisotropic conductive film 213. In the integration,diffusion bonding using an ultrasonic wave, solder bonding and eutecticbonding can also be applied.

Then, the whole device is subjected to dicing along a dicing line DC anddivision into individual solid-state imaging devices is carried out.

Thus, the solid-state imaging device provided with a contact region suchas a bonding pad on a sealing cover glass can be formed very easily witha high workability.

Thus, the collective mounting is carried out and the individualisolation is then performed without the execution of an individualalignment and an electrical connection such as wire bonding. Therefore,manufacture can easily be carried out and handling can readily beperformed.

Moreover, the trench section (not shown) is previously formed on theglass substrate 201 and the surface is removed to have such a depth asto reach the trench section by a method such as the CMP after themounting. Therefore, the isolation can be carried out very easily.

Moreover, the formation can easily be carried out with a highworkability. Furthermore, it is possible to form individual IT-CCDs byonly cutting or polishing in a state in which an element formationsurface is sealed in a gap C by the bonding. Therefore, it is possibleto provide an IT-CCD in which the element is less damaged, dust is notmixed and has a high reliability.

In addition, the silicon substrate is thinned to have a depth ofapproximately ½ by the CMP. Therefore, a size and a thickness can bereduced. Furthermore, the thickness is reduced after the bonding to theglass substrate. Consequently, it is possible to prevent a deteriorationin a mechanical strength.

According to the structure of the invention, thus, positioning iscarried out on a wafer level, and collective mounting and integrationare sequentially performed for isolation every IT-CCD. Consequently, itis possible to form a solid-state imaging device which can easily bemanufactured and has a high reliability.

While the wiring layer including the bonding pad is constituted by agold layer in the first embodiment, it is apparent that the gold layeris not restricted but another metal such as aluminum or anotherconductor layer such as silicide can be used.

Moreover, the microlens array can also be provided by forming atransparent resin film on the surface of a substrate and forming a lenslayer having a refractive index gradient in a predetermined depth by ionimplantation from the same surface.

Furthermore, it is possible to properly select, as the spacer, a glassor polycarbonate in addition to a silicon substrate.

Forty-third Embodiment

Next, a forty-third embodiment of the invention will be described.

While the description has been given to the solid-state imaging devicein which the through hole penetrating through the glass substrate andthe spacer is formed and the contact region such as a bonding pad isformed on the sealing cover glass in the forty-second embodiment, avariant will be described in the following embodiments.

First of all, the embodiment is characterized by the formation of athrough hole on a spacer, and a glass substrate 201 is prepared as shownin FIG. 56A.

As shown in FIG. 56B, a photosetting resin is formed on the surface ofthe glass substrate 201 by a photo-molding method so that a spacer 213is formed.

As shown in FIG. 56C, then, a through hole 208 is formed by an etchingmethod using photolithography.

Thus, it is possible to easily obtain a sealing cover glass having thespacer and provided with the through hole.

Subsequently, the mounting steps shown in FIGS. 55A to 55E are executedin the same manner as described in the forty-second embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 55E can beobtained.

According to such a method, the spacer can easily be formed. While thephotosetting resin is used in the embodiment, an adhesive itself may beutilized. The glass substrate and the spacer are formed integrally and awarp and a strain can be reduced, and furthermore, manufacture can alsobe carried out easily.

Forty-fourth Embodiment

Next, a forty-fourth embodiment of the invention will be described.

While the silicon substrate for forming the spacer is stuck to the glasssubstrate and is subjected to the patterning in the forty-secondembodiment, a glass substrate may be etched at a one-time etching stepto form a concave portion and a through hole at the same time in theembodiment. Other portions are formed in the same manner as those of theforty-second embodiment.

In the embodiment, first of all, a glass substrate 201 is prepared asshown in FIG. 57A.

As shown in FIG. 57B, then, a resist pattern R is formed on the surfaceand back face of the glass substrate 201, an opening is provided on bothof the surface and back face in a region in which a through hole is tobe formed and an opening is provided on only the back side in a regionin which a concave portion 205 (and a cut trench 204 if necessary)is/are to be formed.

As shown in FIG. 57C, thereafter, the glass substrate 201 is etched fromboth surfaces by using, as masks, the resist patterns on the surface andback face so that the concave portion 205, a cut trench (not shown) anda through hole 208 are formed at the same time.

Thus, it is possible to easily obtain a sealing cover glass having aspacer formed integrally therewith and a through hole formed therein.

Subsequently, the mounting steps shown in FIGS. 55A to 55E are executedin the same manner as described in the forty-second embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 55E can beobtained.

The glass substrate and the spacer are formed integrally and a warp anda strain can be reduced, and furthermore, manufacture can also becarried out easily.

Forty-fifth Embodiment

Next, a forty-fifth embodiment of the invention will be described.

While the silicon substrate for forming a spacer is stuck to the glasssubstrate and is subjected to the patterning in the forty-secondembodiment, a spacer 203S having a pattern formed thereon is stuck to aglass substrate 201 and a through hole is finally formed at an etchingstep. Other portions are formed in the same manner as those of theforty-second embodiment.

First of all, in the embodiment, the glass substrate 201 is prepared asshown in FIG. 58A.

On the other hand, a silicon substrate 203 for forming a spacer isprepared as shown in FIG. 58A′.

As shown in FIG. 58B, then, the silicon substrate 203 is processed by anetching method using photolithography so that the spacer 203S isobtained.

As shown in FIG. 58C, thereafter, an adhesive 202 is applied onto thesurface of the spacer 203S subjected to the patterning.

As shown in FIG. 58D, subsequently, the spacer 203S is stuck inalignment with the glass substrate 201.

As shown in FIG. 58E, then, a through hole 208 is formed by the etchingmethod using the photolithography.

Thus, it is possible to easily obtain a sealing cover glass which hasthe spacer stuck thereto and the through hole formed thereon.

Thereafter, a silicon oxide film (not shown) is formed on at least theinternal wall of the spacer formed of silicon by CVD if necessary.

In the case in which the spacer is formed by an insulator such as aglass or a resin, this step is not required. Moreover, a shielding filmmay be formed on the internal or external wall of the spacer.

Subsequently, the mounting steps shown in FIGS. 55A to 55E are executedin the same manner as described in the forty-second embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 55E can beobtained.

It is also possible to stick the glass substrate to the spacer by usingan ultraviolet curing resin, a thermosetting resin or both of them orapplying a semicuring adhesive. In the formation of the adhesive,moreover, it is possible to properly select supply using a dispenser,screen printing or stamp transfer.

As shown in FIG. 58C, moreover, it is also possible to form a shieldingfilm 215 by a method of sputtering a tungsten film into the inside wallof the concave portion of the spacer.

Consequently, it is possible to obtain an excellent image pick-upcharacteristic without separately providing the shielding film.

Forty-sixth Embodiment

Next, a forty-sixth embodiment of the invention will be described.

In the forty-second embodiment, the description has been given to theexample in which the silicon substrate for forming a spacer is stuck tothe glass substrate and is patterned, and the through hole to penetratethrough the glass substrate and the spacer is finally formed by etching.In the embodiment, as shown in FIGS. 59A to 59F, a shape processing iscarried out by etching a silicon substrate, and a spacer 203S formed upto a through hole 208 a shown in FIG. 59E and a glass substrate 201provided with a through hole 208 b shown in FIG. 59B′ are aligned byusing an alignment mark on a wafer level and both of them are stucktogether with an adhesive layer 202. Other portions are formed in thesame manner as those in the forty-second embodiment.

Also in this case, it is also possible to form a shielding film (215) onan inside wall facing the concave portion of the spacer.

According to such a method, since the through holes are individuallyformed to carry out the sticking, the alignment is required and analmost half aspect ratio is enough. Consequently, the through hole caneasily be formed.

Subsequently, the mounting steps shown in FIGS. 55A to 55E are executedin the same manner as described in the forty-second embodiment, andsticking to an IT-CCD substrate is carried out to perform dicing.Consequently, the solid-state imaging device shown in FIG. 55E can beobtained.

It is also possible to form a conductor layer in each of the throughholes of the spacer 203S and the glass substrate 201 and to then alignboth of them to carry out the sticking.

Forty-seventh Embodiment

Next, a forty-seventh embodiment of the invention will be described.

In the forty-second embodiment, the silicon substrate for forming aspacer is stuck to the glass substrate and the conductor layer 209 isformed on the through hole penetrating through the glass substrate andthe spacer at the etching step, and the IT-CCD substrate 100 is thenstuck thereto. The embodiment is characterized in that the glasssubstrate 200 having a spacer which is provided with the through hole208 in the first to forty-fifth embodiments is aligned with an IT-CCDsubstrate 100 having a reinforcing plate 701 stuck to a back face on awafer level and they are stuck together, and the conductor layer 209 isthen formed in the through hole 208 as shown in FIGS. 60A to 60D.Moreover, a bonding pad 210 is formed to be connected to the conductorlayer 209. Other portions are formed in the same manner as those in thetwenty-eighth embodiment.

When the conductor layer 209 is to be filled, it is possible to easilycarry out the formation by vacuum screen printing using a conductivepaste such as a copper paste or metal plating.

While the description has been given to the method of carrying out, withan adhesive layer, the bonding of a glass substrate constituting asealing cover glass to a spacer and the bonding of an IT-CCD substrateto the sealing cover glass in the embodiments, it is also possible toproperly carry out the bonding through the surface activating coldbonding without using an adhesive in the case in which the spacer andthe surface of the IT-CCD substrate is formed of Si, metal or aninorganic compound in all of the embodiments. If the cover glass isPyrex, anode bonding can also be used when the spacer is formed of Si.In the case in which an adhesive layer is used, it is also possible toutilize, as the adhesive layer, a thermosetting adhesive, a semicuringtype adhesive and a thermosetting combination UV curing adhesive inaddition to a UV adhesive.

Moreover, it is possible to properly select, as a spacer, a 42-alloy,metal, a glass, photosensitive polyimide and a polycarbonate resin inaddition to a silicon substrate in all of the embodiments, which hasalso been described in the forty-second embodiment.

When the IT-CCD substrate is to be bonded to the sealing cover glass byusing the adhesive layer, furthermore, it is preferable that the moltenadhesive layer should be prevented from flowing out, for example, aliquid reservoir should be formed. Referring to the bonded portion ofthe spacer and the IT-CCD substrate or the sealing cover glass,similarly, it is preferable that the molten adhesive layer should beprevented from flowing out, for example, a concave or convex portionshould be formed to provide a liquid reservoir in the bonded portion.

While the CMP is carried out up to the position of the cut trench inorder to isolate the substrate provided with the cut trench into theindividual elements in the embodiments, it is also possible to usegrinding, polishing or overall etching.

In the case in which the reinforcing plate (701) is used in theembodiments, moreover, it can serve as an adiabatic substrate if apolyimide resin, ceramic, a crystallized glass, or a silicon substratehaving a surface and back oxidized is used as a material if necessary.Furthermore, a shielding material may be used.

Moreover, the formation may be carried out by using a moisture-proofsealing material or shielding material.

In the case in which it is necessary to stick the glass substrate to thespacer as described above, moreover, the sticking may be executed byusing an ultraviolet curing resin, a thermosetting resin or both of themor by applying a semi-curing adhesive.

In the formation of the adhesive, furthermore, it is possible toproperly select supply using a disperser, screen printing or stamptransfer.

In addition, the examples described in the embodiments can be modifiedmutually within an applicable range over whole configurations.

Forty-eighth Embodiment

As shown in a sectional view of FIG. 61A and an enlarged sectional viewillustrating a main part in FIG. 61B, a solid-state imaging device hassuch a structure that a sealing cover glass itself is caused to havecondensing and image forming functions to constitute an optical member.Consequently, a size can be more reduced.

A sealing cover glass 220 is provided by a method of forming lensregions having different refractive indices through molding or etchingor ion implantation into the surface of a translucent polycarbonateresin. The glass substrate 220 having a lens to be the optical member isbonded to the surface of an IT-CCD substrate 100 comprising a siliconsubstrate 101 to be a semiconductor substrate provided with an IT-CCD102 through a spacer 203S in order to have a gap C corresponding to thelight receiving region of the silicon substrate 101 and the peripheraledge of the silicon substrate 101 is individually isolated by dicing,and an electrical connection to an external circuit (not shown) can beachieved through a bonding pad BP formed on the surface of the siliconsubstrate 101.

In this example, the bonding pad BP is formed to be exposed from thespacer 203S in a partial region which is not shown, thereby constitutinga signal fetch terminal and a current supply terminal. The spacer 203Shas a height of 10 to 500 μm, and preferably 80 to 120 μm.

The other portions of the IT-CCD in this embodiment are almost same tothe IT-CCDs provided in the first embodiment, or the forty-secondembodiment.

Next, a process for manufacturing the solid-state imaging device isshown in FIGS. 62A, 62A′, and 62B to 62D and FIGS. 63A to 63C.

As shown in FIG. 62A, a lens array is formed by an ion implanting methodand the sealing cover glass 220 having the lens array is thus formed.The sealing cover glass 220 having the lens array can also be formed bymolding or etching.

An adhesive layer 202 is formed on a silicon substrate 203 for a spaceras shown in FIG. 62A′ and they are integrated as shown in FIG. 62C.

By using, as a mask, a resist pattern formed by an etching method usingphotolithography, etching is carried out to form the spacer 203S asshown in FIG. 62D.

Then, an adhesive layer 207 is formed on the surface of the spacer 203Sof the sealing cover glass 220 having the lens array which is formed atthe step shown in FIG. 62D.

On the other hand, the IT-CCD substrate 100 provided with a reinforcingplate 701 is prepared as shown in FIG. 63( b). In the formation of theelement substrate, as shown in FIG. 63( b), the silicon substrate 101 (a4 to 8 inch wafer is used) is prepared in advance (only one unit isshown in the drawing and a plurality of IT-CCDs are continuously formedon one wafer). It is also possible to easily carry out division afterthe mounting by a method of forming, through etching, a cut trench in aregion corresponding to a dividing line for division into each IT-CCDover the surface of the silicon substrate 101.

Then, a channel stopper layer is formed, a channel region is formed andan element region 102 such as an electric charge transfer electrode . .. is formed by using an ordinary silicon process. Moreover, there isformed a bonding pad BP which is provided with a wiring layer on asurface and comprises a gold layer for an external connection.

As shown in FIG. 63( c), thereafter, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the sealing cover glass 220 having the lens array to which thespacer 203S is bonded is mounted on the IT-CCD substrate 100 providedwith the element region as described above, and heating is carried outto integrate both of them with the adhesive layer 207. It is desirablethat this step should be executed in a vacuum or an inert gas atmospheresuch as a nitrogen gas.

Moreover, a variant of the process for manufacturing the spacer and thesealing cover glass 220 having the lens array will be described in thefollowing embodiments.

Forty-nineth Embodiment

Next, a forty-ninth embodiment of the invention will be described.

As shown in FIGS. 64A and 64B, the embodiment is characterized in that asealing cover glass 220 having a lens array is prepared and a concaveportion 225 is formed on the back side thereof by etching, and a spacer223S is formed integrally. Other portions are formed in the same manneras those in the embodiments.

According to such a structure, the formation can easily be carried outwith a high workability, and furthermore, it is possible to obtain thesealing cover glass 220 having a lens array in which a strain is notgenerated because of the integral formation and a reliability isenhanced.

Fiftieth Embodiment

Next, a fiftieth embodiment of the invention will be described.

In the embodiment, first of all, a glass substrate 220 having a lensarray is prepared as shown in FIG. 65A.

As shown in FIG. 5B, then, a photo-curing resin is formed by aphoto-molding method on the surface of the glass substrate 220 having alens array and a spacer 223S is formed.

Thus, it is possible to easily obtain a sealing cover glass having thespacer and provided with a through hole.

Subsequently, the mounting steps shown in FIGS. 63A to 63C are executedin the same manner as described in the embodiments, and sticking to anIT-CCD substrate is carried out to perform dicing. Consequently, thesolid-state imaging device shown in FIG. 63C can be obtained.

Fifty-first Embodiment

Next, a fifty-first embodiment of the invention will be described.

While the silicon substrate is stuck to the sealing cover glass 220having the lens array and is subjected to the patterning in theforty-eighth embodiment, a spacer 203S formed by an etching method maybe stuck to the cover glass 220 having the lens array as shown in FIGS.66A to 66D in this example. At the mounting step, similarly, sticking toan IT-CCD substrate is carried out and dicing is performed in the samemanner as in the fiftieth embodiment so that a solid-state imagingdevice can be obtained.

Fifty-second Embodiment

Next, a fifty-second embodiment of the invention will be described.

As shown in FIGS. 67A to 67D, moreover, a sealing cover glass 220 havinga lens array, a spacer 203S and an IT-CCD substrate 100 having areinforcing plate 701 may be fixed at the same time.

Fifty-third Embodiment

Next, a fifty-third embodiment of the invention will be described.

As shown in FIGS. 68A to 68D, moreover, a sealing cover glass 220 havinga lens array can also be applied to a solid-state imaging device inwhich a peripheral circuit board 901 is provided through an anisotropicconductive film 115. Other portions are formed in the same manner asthose in the embodiments.

Also in the connection of the peripheral circuit board 901, furthermore,diffusion bonding using an ultrasonic wave, solder bonding and eutecticbonding by thermocompression are also effective. In addition,underfilling using a resin may be carried out.

The sealing cover glass 220 having a lens array may be used in place ofthe sealing cover glass 200 formed by a plate-shaped member.

Fifty-fourth Embodiment

Next, a fifty-fourth embodiment of the invention will be described.

As shown in FIG. 69, moreover, an IT-CCD substrate 100, a peripheralcircuit board 901 and a reinforcing plate 701 may be provided in thisorder. Other portions are formed in the same manner as those in theembodiments.

Fifty-fifth Embodiment

Next, a fifty-fifth embodiment of the invention will be described.

As shown in FIG. 70, moreover, it is also effective that a wiring 221 isformed on the side wall of a spacer.

In manufacture, it is possible to easily form a wiring on a side wall byproviding a through hole in a spacer, forming a conductor layer in thethrough hole, sticking an IT-CCD substrate to a sealing cover glass 220having a lens and then carrying out division along a dicing lineincluding the through hole. Other portions are formed in the same manneras those in the embodiments.

While the description has been given to the method of carrying out, withan adhesive layer, the bonding of a glass substrate constituting asealing cover glass to a spacer and the bonding of an IT-CCD substrateto the sealing cover glass in the embodiments, it is also possible toproperly carry out the bonding through the surface activating coldbonding without using an adhesive in the case in which the spacer andthe surface of the IT-CCD substrate is formed of Si, metal or aninorganic compound in all of the embodiments. If the cover glass isPyrex, anode bonding can also be used when the spacer is formed of Si.In the case in which an adhesive layer is used, it is also possible toutilize, as the adhesive layer, a thermosetting adhesive, a semicuringtype adhesive and a thermosetting combination UV curing adhesive inaddition to a UV adhesive.

Moreover, it is possible to properly select, as a spacer, a 42-alloy,metal, a glass, photosensitive polyimide and a polycarbonate resin inaddition to a silicon substrate in all of the embodiments, which hasalso been described in the forty-second embodiment.

When the IT-CCD substrate is to be bonded to the sealing cover glass byusing the adhesive layer, furthermore, it is preferable that the moltenadhesive layer should be prevented from flowing out, for example, aliquid reservoir should be formed. Referring to the bonded portion ofthe spacer and the IT-CCD substrate or the sealing cover glass,similarly, it is preferable that the molten adhesive layer should beprevented from flowing out, for example, a concave or convex portionshould be formed to provide a liquid reservoir in the bonded portion.

While the CMP is carried out up to the position of the cut trench inorder to isolate the substrate provided with the cut trench into theindividual elements in the embodiments, it is also possible to usegrinding, polishing or overall etching.

In the case in which the reinforcing plate (701) is used in theembodiments, moreover, it can serve as an adiabatic substrate if apolyimide resin, ceramic, a crystallized glass, or a silicon substratehaving a surface and back oxidized is used as a material if necessary.Furthermore, a shielding material may be used.

Moreover, the formation may be carried out by using a moisture-proofsealing material or shielding material.

In the case in which it is necessary to stick the glass substrate to thespacer in the embodiments, moreover, the sticking may be executed byusing an ultraviolet curing resin, a thermosetting resin or both of themor by applying a semi-curing adhesive. In the formation of the adhesive,furthermore, it is possible to properly select supply using a disperser,screen printing or stamp transfer.

In addition, the examples described in the embodiments can be modifiedmutually within an applicable range over whole configurations.

While the wiring layer including the bonding pad is constituted by agold layer in the forty-eighth embodiment, it is apparent that the goldlayer is not restricted but another metal such as aluminum or anotherconductor layer such as silicide can be used.

Moreover, the microlens array can also be provided by forming atransparent resin film on the surface of a substrate and forming a lenslayer having a refractive index gradient in a predetermined depth by ionimplantation from the surface.

Fifty-sixth Embodiment

As shown in a sectional view of FIG. 71A and an enlarged sectional viewshowing a main part in FIG. 71B, a solid-state imaging device has such astructure that a sealing cover glass itself is caused to have condensingand image forming functions to constitute an optical member.Consequently, a size can be more reduced.

A sealing cover glass 220 is provided by forming lens regions havingdifferent refractive indices through ion implantation into the surfaceof a translucent polycarbonate resin. The glass substrate 220 having alens to be the optical member is bonded to the surface of an IT-CCDsubstrate 100 comprising a silicon substrate 101 to be a firstsemiconductor substrate provided with an IT-CCD 102 through a spacer203S in order to have a gap C corresponding to the light receivingregion of the silicon substrate 101, and furthermore, a peripheralcircuit board 901 comprising a silicon substrate to be a secondsemiconductor substrate is bonded to the back face of the IT-CCDsubstrate 100 and a contact pad 118 is formed on a back face, andfurthermore, the peripheral edge of the silicon substrate 101 isindividually isolated by dicing.

The structure of IT-CCD of this embodiment is almost same to the firstembodiment and almost steps of the manufacturing method of the IT-CCD ofthis embodiment are same to the forty-eighth embodiment.

In this embodiment, a conductor layer 117 is formed on the back side ofthe IT-CCD substrate 100 to be connected to the IT-CCD substrate 100 viaa through hole H, and furthermore, a pad 118 is formed so that thesolid-state imaging device shown in FIG. 81A is formed. A silicon oxidefilm 119 is formed on the internal wall of the through hole H.

Thus, it is possible to obtain a solid-state imaging device which caneasily be mounted and has a small size and a high reliability.

Moreover, a variant of the process for manufacturing the spacer and thesealing cover glass 220 having the lens array will be described in thefollowing embodiments.

Fifty-seventh Embodiment

Next, a fifty-seventh embodiment of the invention will be described.

As shown in FIGS. 74A and 74B, the embodiment is characterized in that asealing cover glass 220 having a lens array is prepared and a concaveportion 225 is formed on the back side thereof by etching, and a spacer223S is formed integrally.

According to such a structure, the formation can easily be carried outwith a high workability, and furthermore, it is possible to obtain thesealing cover glass 220 having a lens array in which a strain is notgenerated because of the integral formation and a reliability isenhanced.

Fifty-eighth Embodiment

Next, a fifty-eighth embodiment of the invention will be described.

In the embodiment, first of all, a glass substrate 220 having a lensarray is prepared as shown in FIG. 75A.

As shown in FIG. 75B, then, a photo-curing resin is formed on thesurface of the glass substrate 220 having a lens array through adispenser or screen printing and a spacer 223S is formed.

Thus, it is possible to easily obtain a sealing cover glass having thespacer and provided with a through hole.

Subsequently, the mounting steps shown in FIGS. 73A to 73C are executedin the same manner as described in the embodiments, and sticking to anIT-CCD substrate is carried out, and furthermore, a peripheral circuitboard 901 is bonded. Finally, a through hole is formed to electricallyconnect an IT-CCD substrate 100 to the peripheral circuit board 901, anddicing is then carried out. Consequently, the solid-state imaging deviceshown in FIG. 73C can be obtained.

Fifty-nineth Embodiment

Next, a fifty-ninth embodiment of the invention will be described.

In the fifty-ninth embodiment, as shown in FIGS. 76A, 76A′, and 76B to76D, a spacer 203S subjected to patterning may be stuck to a sealingcover glass 220 having a lens array.

Sixtieth Embodiment

Next, a sixtieth embodiment of the invention will be described.

As shown in FIGS. 77A to 77C, moreover, a sealing cover glass 220 havinga lens array, a spacer 203S and an IT-CCD substrate 100 may be fixed atthe same time.

Sixty-first Embodiment

Next, a Sixty-first embodiment of the invention will be described.

As shown in FIGS. 78A to 78D, moreover, a sealing cover glass 220 havinga lens array can also be applied to a solid-state imaging device inwhich a peripheral circuit board 901 is provided through an anisotropicconductive film 115.

The sealing cover glass 220 having a lens array may be used in place ofthe sealing cover glass 200 formed by a plate-shaped member.

Also in the connection of the peripheral circuit board 901, furthermore,diffusion bonding using an ultrasonic wave, solder bonding and eutecticbonding by thermocompression are also effective. In addition,underfilling using a resin may be carried out.

Sixty-second Embodiment

Next, a sixty-second embodiment of the invention will be described.

As shown in FIG. 79, moreover, a through hole to penetrate through aperipheral circuit board and an IT-CCD substrate may be separatelyformed twice and a conductor layer 117 may be formed therein to be takenout downward. 221 denotes a wiring layer.

Sixty-third Embodiment

Next, a Sixty-third embodiment of the invention will be described.

As shown in FIG. 80, moreover, it is also effective that a wiring 221 isformed on the side wall of a spacer.

In manufacture, it is possible to easily form a wiring on a side wall byproviding a through hole in a spacer, forming a conductor layer in thethrough hole, sticking an IT-CCD substrate to a sealing cover glass 220having a lens and then carrying out division along a dicing lineincluding the through hole.

While the description has been given to the method of bonding the IT-CCDsubstrate to the sealing cover glass with an adhesive layer in theembodiments, it is not restricted but a method of pouring a mold resin,a method using direct bonding and cold activating direct bonding canalso be applied.

When the IT-CCD substrate is to be bonded to the sealing cover glass byusing the adhesive layer, furthermore, it is preferable that the moltenadhesive layer should be prevented from flowing out, for example, aconcave portion (a liquid reservoir) should be formed in a bondedportion.

In the method of the invention, thus, collective mounting is carried outand individual isolation is then performed without the execution of anindividual alignment and an electrical connection such as wire bonding.Therefore, manufacture can easily be carried out and handling can alsobe performed readily.

According to the structure of the invention, thus, positioning iscarried out on a wafer level, and collective mounting and integrationare sequentially performed for isolation every IT-CCD. Consequently, itis possible to form a solid-state imaging device which can easily bemanufactured and has a high reliability.

While the description has been given to the method of carrying out, withan adhesive layer, the bonding of a glass substrate constituting asealing cover glass to a spacer and the bonding of an IT-CCD substrateto the sealing cover glass in the embodiments, it is also possible toproperly carry out the bonding through the surface activating coldbonding without using an adhesive in the case in which the spacer andthe surface of the IT-CCD substrate is formed of Si, metal or aninorganic compound in all of the embodiments. If the cover glass isPyrex, anode bonding can also be used when the spacer is formed of Si.In the case in which an adhesive layer is used, it is also possible toutilize, as the adhesive layer, a thermosetting adhesive, a semicuringtype adhesive and a thermosetting combination UV curing adhesive inaddition to a UV adhesive.

Moreover, it is possible to properly select, as a spacer, a 42-alloy,metal, a glass, photosensitive polyimide and a polycarbonate resin inaddition to a silicon substrate in all of the embodiments, which hasalso been described in the forty-second embodiment.

When the IT-CCD substrate is to be bonded to the sealing cover glass byusing the adhesive layer, furthermore, it is preferable that the moltenadhesive layer should be prevented from flowing out, for example, aliquid reservoir should be formed. Referring to the bonded portion ofthe spacer and the IT-CCD substrate or the sealing cover glass,similarly, it is preferable that the molten adhesive layer should beprevented from flowing out, for example, a concave or convex portionshould be formed to provide a liquid reservoir in the bonded portion.

While the CMP is carried out up to the position of the cut trench inorder to isolate the substrate provided with the cut trench into theindividual elements in the embodiments, it is also possible to usegrinding, polishing or overall etching.

In the case in which the reinforcing plate (701) is used in theembodiments, moreover, it can serve as an adiabatic substrate if apolyimide resin, ceramic, a crystallized glass, or a silicon substratehaving a surface and back oxidized is used as a material if necessary.Furthermore, a shielding material may be used.

In the case in which it is necessary to stick the glass substrate to thespacer in the embodiments, moreover, the sticking may be executed byusing an ultraviolet curing resin, a thermosetting resin or both of themor by applying a semi-curing adhesive. In the formation of the adhesive,furthermore, it is possible to properly select supply using a disperser,screen printing or stamp transfer.

In addition, the examples described in the embodiments can be modifiedmutually within an applicable range over whole configurations.

While the wiring layer including the bonding pad is constituted by agold layer in the fifty-sixth embodiment, it is apparent that the goldlayer is not restricted but another metal such as aluminum or anotherconductor layer such as silicide can be used.

Moreover, the microlens array can also be provided by forming atransparent resin film on the surface of a substrate and forming a lenslayer having a refractive index gradient in a predetermined depth by ionimplantation from the surface.

Sixty-fourth Embodiment

As shown in a sectional view of FIG. 81A and an enlarged sectional viewshowing a main part in FIG. 81B, a solid-state imaging device has such astructure that a glass substrate 201 to be a translucent member isbonded to the surface of an IT-CCD substrate 100 comprising a siliconsubstrate 101 to be a semiconductor substrate provided with an IT-CCD102 through a spacer 203S in order to have a gap C corresponding to thelight receiving region of the silicon substrate 101, and furthermore, aperipheral circuit board 901 is connected to the back side.

A pad 113 and a bump 114 are formed to be external fetch terminals whichare formed on the back side of the IT-CCD substrate 100 via a throughhole H provided in the silicon substrate 101. Then, a connection to theperipheral circuit board 901 is carried out through an anisotropicconductive film 115 and a peripheral edge is individually isolated bydicing, and an external connection is thus carried out through a bondingpad 118. The spacer 203S has a height of 10 to 500 μm, and preferably 80to 120 μm. The numeral 701 refers to a reinforcing plate.

In this embodiment, the IT-CCD substrate 100 has almost same structureto that of the first embodiment. The difference is that the through holedoes not appear on the section but is formed to be connected to anelectric charge transfer electrode 32 in this embodiment.

Next, description will be given to a process for manufacturing thesolid-state imaging device. This method is based on a so-called waferlevel CSP method in which positioning is carried out on a wafer level,collective mounting and integration are performed and isolation for eachIT-CCD is then executed as shown in views illustrating the manufacturingprocess in FIGS. 82A to 82D and FIGS. 83A to 83C. (Only two units aredisplayed in the following drawings and a large number of IT-CCDs arecontinuously formed on a wafer). This method is characterized in thatthe edges of the IT-CCD substrate and a glass substrate are constitutedequally and fetch on the back side is carried out via the through holepenetrating through the IT-CCD substrate 100 and the reinforcing plate701 stuck to the back face thereof. Moreover, there is used a sealingcover glass 200 having a spacer which is provided with the spacer 203Sin advance.

First of all, description will be given to the formation of the glasssubstrate having a spacer.

As shown in FIG. 82A, a silicon substrate 203 to be the spacer is stuckto the surface of the glass substrate 201 through an adhesive layer 202comprising an ultraviolet curing type adhesive (a cation polymerizingenergy line curing adhesive), and a resist pattern R1 is caused toremain in a portion to be the spacer by an etching method usingphotolithography.

As shown in FIG. 82B, then, the silicon substrate 203 is etched by usingthe resist pattern R1 as a mask so that the spacer 203S is formed.

As shown in FIG. 82C, thereafter, a resist is filled in a spacer regionexcluding an element region in a state in which the resist pattern R1for forming the spacer 203S is left, and the glass substrate 201 isetched to have a predetermined depth. Consequently, an element trenchsection 204 is formed as shown in FIG. 82D. Subsequently, an adhesivelayer 207 is formed on the surface of the spacer 203S. The spacer 203Sis formed by the silicon substrate 203. For this reason, if the etchingis carried out on such an etching condition that the etching speed ofsilicon oxide to be the principal component of the glass substrate 201is much higher than the etching speed of silicon, the etching may becarried out with the side wall of the spacer 203S exposed to the elementregion. In the formation of the element trench section 204, a dicingblade (a grindstone) may be used.

Moreover, the photolithography may be carried out again to form such aresist pattern R as to include the whole side wall of the spacer 203S,and the etching may be carried out through the resist pattern R, therebyforming the trench section 204. Thus, the sealing cover glass 200provided with the trench section 204 and the spacer 203S is obtained.

Next, the IT-CCD substrate is formed. In the formation of the elementsubstrate, as shown in FIG. 83A, the silicon substrate 101 (a 4 to 8inch wafer is used) is prepared in advance (only one unit is displayedin the following drawings and a large number of IT-CCDs are continuouslyformed on a wafer). By using an ordinary silicon process, then, achannel stopper layer is formed, a channel region is formed and anelement region such as an electric charge transfer electrode . . . isformed. Thereafter, the reinforcing plate 701 formed by a siliconsubstrate which is provided with a silicon oxide film is bonded to theback face of the IT-CCD substrate 100 through surface activating coldbonding (FIG. 83A).

As shown in FIG. 83B, then, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and the cover glass 200 having the spacer 203S stuck to the plate-shapedglass substrate 201 is mounted on the IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith the adhesive layer 207. It is desirable that this process should beexecuted in a vacuum or an inert gas atmosphere such as a nitrogen gas.

Subsequently, the through hole H is formed on the back side of thereinforcing plate 701 by the photolithography. Then, a silicon oxidefilm 109 is formed in the through hole H by a CVD method. Thereafter,anisotropic etching is carried out to cause the silicon oxide film 109to remain on only the side wall of the through hole H as shown in FIG.83C.

As shown in FIG. 84A, subsequently, a tungsten film is formed as aconductor layer 108 to come in contact with the bonding pad in thethrough hole H by the CVD method using WF₆.

As shown in FIG. 84B, then, the bonding pad 113 and the bump 114 areformed on the surface of the reinforcing plate 701.

Thus, it is possible to form a signal fetch electrode terminal and aconducting electrode terminal on the reinforcing plate 701 side.

As shown in FIG. 84C, thereafter, an anisotropic conductive film 115(ACP) is applied onto the surface of the reinforcing plate 701.

As shown in FIG. 84D, finally, the circuit board 901 provided with adriving circuit is connected through the anisotropic conductive film115. The circuit board 901 is provided with a contact layer 117 formedby a conductor layer filled in the through hole H to penetrate throughthe board and a bonding pad 118. A connection to the circuit board 901can also be carried out through bonding using an ultrasonic wave, solderbonding or eutectic bonding.

Accordingly, it is possible to easily achieve a connection to a circuitboard such as a printed board through the bonding pad 118.

Then, the whole device is subjected to dicing along a dicing line DCincluding the contact layer 117 and the conductor layer 108 andisolation into individual solid-state imaging devices is thus carriedout (only one unit is shown in the drawing and a plurality of IT-CCDsare continuously formed on one wafer).

Thus, the solid-state imaging device can be formed very easily with ahigh workability.

The reinforcing plate 701 is constituted by the silicon substrateprovided with the silicon oxide film. Therefore, it is possible to carryout heat insulation and electrical insulation from the IT-CCD substrate100.

While the conductor layer is formed in the through hole H by the CVDmethod in the embodiment, moreover, it is possible to easily fill theconductive layer in the contact hole having a high aspect ratio with ahigh workability by using a plating method, a vacuum screen printingmethod or a vacuum sucking method.

While the electrical connection of the surface and back of the IT-CCDsubstrate and the circuit board mounting the peripheral circuit iscarried out by using the through hole in the embodiment, furthermore, itis not restricted but a method of forming a contact to electricallyconnect the surface and the back by impurity diffusion from the surfaceand the back face can also be employed.

Thus, it is possible to form the signal fetch electrode terminal and theconducting electrode terminal on the reinforcing plate 701 side.

Furthermore, the collective mounting is carried out and the individualisolation is then performed without the execution of an individualalignment and an electrical connection such as wire bonding. Therefore,manufacture can easily be carried out and handling can also be performedreadily.

Moreover, the trench section 204 is previously formed on the glasssubstrate 201 and the surface is removed to have such a depth as toreach the trench section 204 by a method such as the CMP after themounting. Therefore, the isolation can be carried out very easily.

Furthermore, the individual IT-CCDs can be formed by only cutting orpolishing in a state in which an element formation surface is enclosedin a gap C by the bonding. Consequently, it is possible to provide anIT-CCD in which the element is less damaged, dust is not mixed and ahigh reliability is obtained.

Moreover, the silicon substrate is thinned to have a depth ofapproximately ½ by the CMP. Therefore, a size and a thickness can bereduced. Furthermore, the thickness is reduced after the bonding to theglass substrate. Consequently, it is possible to prevent a deteriorationin a mechanical strength.

According to the structure of the invention, thus, positioning iscarried out on a wafer level, and collective mounting and integrationare sequentially performed for isolation every IT-CCD. Consequently, itis possible to form a solid-state imaging device which can easily bemanufactured and has a high reliability.

While the formation is carried out by a method of performing acollective connection on a wafer level CSP and dicing in the embodiment,it is also possible to form the through hole H, to carry out the dicingover the IT-CCD substrate 100 provided with the bump 114 and to fix thesealing cover glass 200 individually.

In addition, a microlens array can also be provided by forming atransparent resin film on the surface of the substrate and forming alens layer having a refractive index gradient in a predetermined depthby ion implantation from the same surface.

Moreover, it is possible to properly select, as a spacer, a 42-alloy,metal, a glass, photosensitive polyimide and a polycarbonate resin inaddition to a silicon substrate in all of the embodiments, which hasalso been described in the first embodiment.

Sixty-fifth Embodiment

Next, a sixty-fifth embodiment of the invention will be described.

While the through hole H is formed to penetrate through the reinforcingplate 701 and the conductor layer 111 is formed in the sixty-fourthembodiment, an IT-CCD substrate is formed by using a silicon substrateprovided with a hole (a vertical hole) in advance in the embodiment.Since a small formation depth for the vertical hole is enough,consequently, a productivity can be enhanced and a manufacturing yieldcan be improved.

More specifically, as shown in FIG. 85A, a resist pattern is firstformed on the back face of the silicon substrate by photolithographyprior to the formation of an IT-CCD, and a vertical hole 118 is formedby RIE (reactive ion etching) by using the resist pattern as a mask. Atthis step, a pad 110 formed of aluminum is provided on a surface and thevertical hole 118 is formed to reach the pad 110.

As shown in FIG. 85B, then, a silicon oxide film 119 is formed on theinternal wall of the vertical hole 118 by a CVD method.

As shown in FIG. 85C, thereafter, an element region for forming theIT-CCD is provided by using the same ordinary silicon process as that ofeach of the embodiments.

As shown in FIG. 85D, subsequently, an alignment is carried out with analignment mark formed in the peripheral edge portion of each substrate,and a cover glass 200 having a spacer 203S bonded to a plate-shapedglass substrate 201 is mounted on an IT-CCD substrate 100 formed asdescribed above and is thus heated so that both of them are integratedwith an adhesive layer 207. Similarly, surface activating cold bondingmay be used at the bonding step.

As shown in FIG. 85E, then, the reinforcing plate 701 is bonded to theback side of the IT-CCD substrate 100 through the surface activatingcold bonding and a through hole 108 is formed to reach the vertical hole118 from the back side by an etching method using the photolithography.Similarly, it is desirable that the internal wall of the through hole108 should be insulated. Moreover, it is also possible to use areinforcing plate provided with a through hole in advance.

Subsequently, the steps shown in FIGS. 84A to 84D described in thesixty-fourth embodiment are executed. Consequently, it is possible toeasily form a solid-state imaging device having such a structure that acircuit board provided with a peripheral circuit is laminated.

In the embodiment, as described above, the small formation depth of thevertical hole is enough so that a productivity can be enhanced and amanufacturing yield can be improved.

Sixty-sixth Embodiment

Next, a sixty-sixth embodiment of the invention will be described.

In the sixty-fifth embodiment, the contact is formed to penetratethrough the reinforcing plate 701, the IT-CCD substrate and the circuitboard and an electrode is fetched from the circuit board side. Theembodiment is characterized in that a conductor layer 120 to be a wiringlayer is formed on a side wall and an electrode is fetched from the sidewall of a solid-state imaging device as shown in FIGS. 86A and 86B.

A manufacturing process is almost the same as that of the sixty-fifthembodiment. The position of a through hole is set to correspond to eachof the ends of the solid-state imaging device and dicing is carried outby using a cutting line DC including the through hole. Consequently, itis possible to easily form the solid-state imaging device having awiring layer provided on a side wall.

Moreover, the conductor layer 120 to be filled in the through hole isconstituted by a shielding material such as tungsten. Consequently,since the solid-state imaging device is shielded, a malfunction can bereduced.

When the reinforcing plate is constituted by a polyimide resin, ceramic,a crystallized glass or a silicon substrate having a surface and a backface oxidized, furthermore, it can function as an adiabatic substrate.Moreover, the reinforcing plate may be formed by a shielding material.

Sixty-seventh Embodiment

Next, a sixty-seventh embodiment of the invention will be described.

While the back side of the IT-CCD substrate 100 is provided on theperipheral circuit board through the reinforcing plate in the second andsixty-sixth embodiments, the IT-CCD substrate 100 is provided on aperipheral circuit board 901 and a reinforcing plate 701 is sequentiallyprovided on the back side of the peripheral circuit board 901 as shownin FIG. 87 in the embodiment.

The reinforcing plate also serves as a radiation plate.

While a manufacturing process is almost the same as that of each of thesecond and sixty-sixth embodiments, the IT-CCD substrate 100 and theperipheral circuit board 901 are provided close to each other.Correspondingly, a connecting resistance can be reduced and high-speeddriving can be carried out.

Sixty-eighth Embodiment

Next, a sixty-eighth embodiment of the invention will be described.

While the through hole is formed in the substrate and the electrode isfetched on the back side of the peripheral circuit board in thesixty-eighth embodiment, this example is characterized in that aconductor layer 121 to be a wiring layer is formed on a side wall asshown in FIG. 88.

In manufacture, in the same manner as in the sixty-sixth embodiment, itis possible to easily form a solid-state imaging device having a sidewall wiring by only setting a dicing line into a position including acontact formed in a through hole.

In the solid-state imaging device, the wiring is formed on the sidewall. Therefore, it is possible to form a signal fetch terminal and acurrent supply terminal on the side wall. It is apparent that a pad anda bump on the back side of a peripheral circuit board 901 may be formedto carry out a connection. 701 denotes a reinforcing plate.

While the description has been given to the method of carrying out, withan adhesive layer, the bonding of a glass substrate constituting asealing cover glass to a spacer and the bonding of an IT-CCD substrateto the sealing cover glass in the embodiments, it is also possible toproperly carry out the bonding through the surface activating coldbonding without using an adhesive in the case in which the spacer andthe surface of the IT-CCD substrate is formed of Si, metal or aninorganic compound in all of the embodiments. If the cover glass isPyrex, anode bonding can also be used when the spacer is formed of Si.In the case in which an adhesive layer is used, it is also possible toutilize, as the adhesive layer, a thermosetting adhesive, a semicuringtype adhesive and a thermosetting combination UV curing adhesive inaddition to a UV adhesive.

Moreover, it is possible to properly select, as a spacer, a 42-alloy,metal, a glass, photosensitive polyimide and a polycarbonate resin inaddition to a silicon substrate in all of the embodiments, which hasalso been described in the sixty-fourth embodiment.

When the IT-CCD substrate is to be bonded to the sealing cover glass byusing the adhesive layer, furthermore, it is preferable that the moltenadhesive layer should be prevented from flowing out, for example, aliquid reservoir should be formed. Referring to the bonded portion ofthe spacer and the IT-CCD substrate or the sealing cover glass,similarly, it is preferable that the molten adhesive layer should beprevented from flowing out, for example, a concave or convex portionshould be formed to provide a liquid reservoir in the bonded portion.

While the CMP is carried out up to the position of the cut trench inorder to isolate the substrate provided with the cut trench into theindividual elements in the embodiments, it is also possible to usegrinding, polishing or overall etching.

In the case in which the reinforcing plate (701) is used in theembodiments, moreover, it can serve as an adiabatic substrate if apolyimide resin, ceramic, a crystallized glass, or a silicon substratehaving a surface and back face oxidized is used as a material ifnecessary. Furthermore, a shielding material may be used.

In the case in which it is necessary to stick the glass substrate to thespacer in the embodiments, moreover, the sticking may be executed byusing an ultraviolet curing resin, a thermosetting resin or both of themor by applying a semi-curing adhesive. In the formation of the adhesive,furthermore, it is possible to properly select supply using a disperser,screen printing or stamp transfer.

In addition, the examples described in the above embodiments can bemodified mutually within an applicable range over whole configurations.

ADVANTAGE OF THE INVENTION

As described above, according to the method of manufacturing asolid-state imaging device in accordance with the invention, positioningis carried out on a wafer level and collective mounting is performed toachieve integration including the formation of an electrode terminal forexternal fetch, and isolation is then executed for each IT-CCD.Consequently, it is possible to form a solid-state imaging device whichcan easily be manufactured and has a high reliability.

As described above, according to the solid-state imaging device inaccordance with the invention, a through hole is formed to penetratethrough a spacer and a sealing cover glass and an electrode fetchterminal is provided on the sealing cover glass. Consequently, aconnection to the outside can easily be carried out and a size can bereduced.

According to the method of manufacturing a solid-state imaging device inaccordance with the invention, positioning is carried out on a waferlevel, and a through hole is formed to penetrate through a spacer and asealing cover glass and collective mounting is performed to achieveintegration including the formation of an electrode terminal forexternal fetch which is provided on the sealing cover glass, andisolation is then executed for each IT-CCD. Consequently, it is possibleto form a solid-state imaging device which can easily be manufacturedand has a high reliability.

Additionally, as described above, according to the solid-state imagingdevice in accordance with the invention, a translucent substrate havingan optical member such as a lens is used. Therefore, the optical memberdoes not need to be mounted, and a size can be reduced and a reliabilitycan be enhanced.

According to the method of manufacturing a solid-state imaging device inaccordance with the invention, moreover, an IT-CCD substrate ispositioned on a wafer level with respect to a translucent substratehaving an optical member such as a lens, and collective mounting isperformed to achieve integration including the formation of an electrodeterminal for external fetch, and isolation is then executed for eachIT-CCD. Consequently, it is possible to form a solid-state imagingdevice which can easily be manufactured and has a high reliability.

Moreover, according to the solid-state imaging device in accordance withthe invention, a translucent substrate having an optical member, forexample, a lens and a peripheral circuit board, and an IT-CCD substrateare bonded integrally. Therefore, it is possible to provide asolid-state imaging device which has a small size and a highreliability.

According to the method of manufacturing a solid-state imaging device inaccordance with the invention, moreover, an IT-CCD substrate ispositioned on a wafer level with respect to a translucent substratehaving an optical member such as a lens and a peripheral circuit board,and collective mounting is performed to achieve integration includingthe formation of an electrode terminal for external fetch, and isolationis then executed for each IT-CCD. Consequently, it is possible to form asolid-state imaging device which can easily be manufactured and has ahigh reliability.

As described above, according to the invention, it is possible to form asolid-state imaging device having a small size and a high driving speed.

According to the invention, moreover, positioning is carried out on awafer level and the IT-CCD substrate, the peripheral circuit board andthe translucent member are collectively mounted and are thus integrated,and are then isolated for each IT-CCD. Consequently, manufacture caneasily be carried out and positioning can be performed with highprecision.

1. A solid-state imaging device comprising: a semiconductor substrateprovided with an IT-CCD; and a translucent member connected to thesemiconductor substrate in order to have a gap opposite to a lightreceiving region of the IT-CCD, wherein the translucent memberconstitutes an optical member having a condensing function, wherein thetranslucent member is connected to the semiconductor substrate through aspacer, and wherein the spacer is constituted by the same material asthat of the semiconductor substrate.
 2. A solid-state imaging devicecomprising: a semiconductor substrate provided with an IT-CCD; and atranslucent member connected to the semiconductor substrate in order tohave a gap opposite to a light receiving region of the IT-CCD, whereinthe translucent member constitutes an optical member having a condensingfunction, wherein the translucent member is connected to thesemiconductor substrate through a spacer, and wherein the spacer isconstituted by a 42-alloy or silicon.
 3. A solid-state imaging devicecomprising: a first semiconductor substrate provided with an IT-CCD; anda translucent member having a condensing function which is connected tothe first semiconductor substrate in order to have a gap opposite to alight receiving region of the IT-CCD, wherein a second semiconductorsubstrate constituting a peripheral circuit is provided on the firstsemiconductor substrate, wherein the translucent member is connected tothe first semiconductor substrate through a spacer, and wherein thespacer is constituted by the same material as that of the firstsemiconductor substrate.
 4. A solid-state imaging device comprising: afirst semiconductor substrate provided with an IT-CCD; and a translucentmember connected to the first semiconductor substrate in order to have agap opposite to a light receiving region of the IT-CCD, wherein a secondsemiconductor substrate having a peripheral circuit formed thereon isprovided on a surface opposed to a surface of the first semiconductorsubstrate on which the IT-CCD is to be formed, and the peripheralcircuit is connected to the IT-CCD via a through hole provided on thefirst semiconductor substrate, wherein the first and secondsemiconductor substrates are bonded to each other with an adhesive layerin between.
 5. A solid-state imaging device comprising: a firstsemiconductor substrate provided with an IT-CCD; and a translucentmember connected to the first semiconductor substrate in order to have agap opposite to a light receiving region of the IT-CCD, wherein a secondsemiconductor substrate having a peripheral circuit formed thereon isprovided on a surface opposed to a surface of the first semiconductorsubstrate on which the IT-CCD is to be formed, and the peripheralcircuit is connected to the IT-CCD via a through hole provided on thefirst semiconductor substrate. wherein the first and secondsemiconductor substrates are bonded to each other with a heat insulatingmaterial in between.
 6. A solid-state imaging device comprising: a firstsemiconductor substrate provided with an IT-CCD; and a translucentmember connected to the first semiconductor substrate in order to have agap opposite to a light receiving region of the IT-CCD, wherein a secondsemiconductor substrate having a peripheral circuit formed thereon isprovided on a surface opposed to a surface of the first semiconductorsubstrate on which the IT-CCD is to be formed, and the peripheralcircuit is connected to the IT-CCD via a through hole provided on thefirst semiconductor substrate, wherein the first and secondsemiconductor substrates are bonded to each other with a magnetic shieldmaterial in between.
 7. A solid-state imaging device comprising: asemiconductor substrate provided with an IT-CCD; and a translucentmember connected to the semiconductor substrate in order to have a gapopposite to a light receiving region of the IT-CCD, wherein thetranslucent member constitutes an optical member having a condensingfunction, and wherein a peripheral edge portion of the translucentmember is substantially aligned with a peripheral edge portion of thesemiconductor substrate.
 8. A solid-state imaging device comprising: asemiconductor substrate provided with an IT-CCD; and a translucentmember connected to the semiconductor substrate in order to have a gapopposite to a light receiving region of the IT-CCD, wherein thetranslucent member constitutes an optical member having a condensingfunction, further comprising a bonding pad formed between thetranslucent member and the semiconductor substrate.
 9. A solid-stateimaging device comprising: a first semiconductor substrate provided withan IT-CCD; and a translucent member having a condensing function whichis connected to the first semiconductor substrate in order to have a gapopposite to a light receiving region of the IT-CCD, wherein a secondsemiconductor substrate constituting a peripheral circuit is provided onthe first semiconductor substrate, and wherein a peripheral edge portionof the translucent member is substantially aligned with a peripheraledge portion of the first semiconductor substrate.
 10. A solid-stateimaging device comprising: a first semiconductor substrate provided withan IT-CCD; and a translucent member having a condensing function whichis connected to the first semiconductor substrate in order to have a gapopposite to a light receiving region of the IT-CCD, wherein a secondsemiconductor substrate constituting a peripheral circuit is provided onthe first semiconductor substrate, further comprising a bonding padformed between the translucent member and the first semiconductorsubstrate.
 11. A solid-state imaging device comprising: a firstsemiconductor substrate provided with an IT-CCD; and a translucentmember connected to the first semiconductor substrate in order to have agap opposite to a light receiving region of the IT-CCD, wherein a secondsemiconductor substrate having a peripheral circuit formed thereon isprovided on a surface opposed to a surface of the first semiconductorsubstrate on which the IT-CCD is to be formed, and the peripheralcircuit is connected to the IT-CCD via a through hole provided on thefirst semiconductor substrate, and wherein a peripheral edge portion ofthe translucent member is substantially aligned with a peripheral edgeportion of the first semiconductor substrate.
 12. A solid-state imagingdevice comprising: a first semiconductor substrate provided with anIT-CCD; and a translucent member connected to the first semiconductorsubstrate in order to have a gap opposite to a light receiving region ofthe IT-CCD, wherein a second semiconductor substrate having a peripheralcircuit formed thereon is provided on a surface opposed to a surface ofthe first semiconductor substrate on which the IT-CCD is to be formed,and the peripheral circuit is connected to the IT-CCD via a through holeprovided on the first semiconductor substrate, further comprising abonding pad formed between the translucent member and the firstsemiconductor substrate.